MA4E1318 Allicdata Electronics
Allicdata Part #:

1465-1025-ND

Manufacturer Part#:

MA4E1318

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: DIODE SCHOTTKY GAAS FLIPCHIP A/P
More Detail: RF Diode Schottky - Anti-Parallel 7V
DataSheet: MA4E1318 datasheetMA4E1318 Datasheet/PDF
Quantity: 4100
Stock 4100Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Schottky - Anti-Parallel
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz
Resistance @ If, F: --
Operating Temperature: -65°C ~ 125°C (TJ)
Package / Case: 2-SMD
Supplier Device Package: --
Description

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MA4E1318 is a type of metal oxide semiconductor (MOS) field–effect transistor (FET) that is designed to be used in radio-frequency (RF) circuits. It is a three-terminal device, with source, gate and drain electrodes, and is usually configured as an enhancement-type MOSFET in which an increase in voltage on the gate electrode results in an increase in drain current. This makes the MA4E1318 ideal for applications such as low-noise amplifiers, variable-gain amplifiers, and non-linear active filters.The basic operation of the MA4E1318 relies on the principle of capacitance-voltage biasing. This is achieved by connecting the source and gate electrodes to a capacitor, creating an electrical field in-between the two electrodes that discharges and recharges as the applied voltage changes. This in turn affects the current flow of the MA4E1318, resulting in changes in output characteristics as well as gain.The MA4E1318 is available in a surface-mount package, and is rated for operation up to 3 GHz. It has a very low noise figure, high linearity, and high power gain. It is also designed to be stable and reliable in a wide range of environmental conditions, making it well suited for use in portable and automotive RF applications.Thanks to its relatively low capacitance drain-source combination, the MA4E1318 can be used to increase the efficiency of power amplifiers while allowing them to be configured for higher output power than traditional designs. It is also ideal for use in non-linear active filters, as it can provide high levels of input and output isolation.The MA4E1318 can be used for a variety of applications, such as low-noise amplifiers, low-power amplifiers, wideband amplifiers, linear radio-frequency amplifiers, and phase shifters. It is also used in active antenna systems and in phase-locked-loop circuits.In addition to radio-frequency applications, the MA4E1318 can also be used for DC-coupled gain control in audio devices, for controlling LED intensity, and for switching in battery-powered applications. The MA4E1318 is especially well suited for battery-powered applications due to its low-drain current characteristics.The MA4E1318 is a versatile device that offers a wide range of design possibilities and is suitable for use in numerous applications. Its low-noise and high-frequency characteristics, wide bandwidth, and low-dc power consumption make it an attractive option for both professional and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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