MA4E2502L-1246

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The MA4E2502L-1246 is a low-cost FET-mounted RF diode in a small 2-pin package. It is designed for use in microwave, mixing and other related applications. The MA4E2502L-1246 is capable of handling dc power and signals up to 12 GHz.

The MA4E2502L-1246 is a Schottky barrier diode. It is composed of two metal electrodes separated by a very thin insulator. This type of diode is known for its low switching delays and high frequencies of operation, making it ideal for applications in which high frequencies are required.

The MA4E2502L-1246 is a low-power diode, making it ideal for use in portable applications such as cell phones and PDAs. It is also suitable for use in high-power applications, such as RF amplifiers, mixers and oscillators.

The MA4E2502L-1246 is a double-die package. It contains two separate Schottky diodes that are physically isolated from each other, allowing greater flexibility in design. The diodes can be used either simultaneously or individually, depending on the application.

The MA4E2502L-1246 is a low power diode. Its operating current is typically in the range of 1.5 to 5 mA, and its reverse-voltage rating is around 10 to 20 volts. The Schottky diode\'s small size and low weight make it suitable for a wide range of applications.

The MA4E2502L-1246 is especially well-suited for use in high frequency mixers and filters. It has a low series resistance, which allows for fast switching and a low noise level. Its small size also allows for easier integration with other components.

The MA4E2502L-1246 is also an ideal diode for modulation. Its ability to handle high frequencies and small signals makes it well-suited for both amplitude and frequency modulation applications.

The MA4E2502L-1246 is a low-cost, low-power Schottky barrier diode, suitable for a wide range of applications in both high and low power settings. It is designed to be easily integrated with other components, making it a versatile and cost-effective addition to any circuit.

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