MA4E1338E1-1068T Discrete Semiconductor Products |
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Allicdata Part #: | 1465-1218-2-ND |
Manufacturer Part#: |
MA4E1338E1-1068T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | SCHOTTKY PLASTIC 8V GUARD RING |
More Detail: | RF Diode Schottky - 2 Independent 8V 30mA 250mW SO... |
DataSheet: | MA4E1338E1-1068T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 2 Independent |
Voltage - Peak Reverse (Max): | 8V |
Current - Max: | 30mA |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MA4E1338E1-1068T is a type of RF diode that has a wide range of applications and uses. It is a low noise RF diode, which has high gain, excellent linearity and high isolation. This makes it a great choice for radio frequency applications such as amplifiers and receivers. This diode is also used in many communication systems and military applications due to its reliability and low-cost production.
The MA4E1338E1-1068T diode is a semiconductor device that is made up of two layers of semiconductor material separated by an insulating layer. The layers are usually made of silicon and germanium, but other materials such as gallium arsenide can be used. The two layers have different bandgaps, which determine the voltage drop of the device when a current passes through it.
This diode has a wide range of uses, due to its performance characteristics. For example, it is often used in amplifier circuits and filters, and it is also used in switch mode power supplies. It can also be used as a detector in radar, and as a mixer in radio frequency applications. Additionally, it is used in military applications due to its high reliability and low-cost production.
The MA4E1338E1-1068T diode is designed to operate up to 33 GHz and it has an insertion loss of less than 6 dB. It has a high impedance level and a high isolation level, which makes it useful for many applications where electromagnetic interference needs to be minimized. Additionally, it has a low reverse current leakage, which means that it can be used for high power applications.
The working principle of the MA4E1338E1-1068T diode is based on the electric current flowing through the two layers of material. When a voltage is applied to the diode, the electrons in the semiconductor material start to move and create an electric field. This electric field causes the electric current to flow in one direction across the semiconductor material and create a voltage drop, which can be used to control the output voltage.
The MA4E1338E1-1068T diode is a useful device for many electronic applications. It is reliable, cost-effective and can be used for a wide range of radio frequency applications. It is also very easy to use and is widely available. As technology advances, so too does the use of this diode in an ever-increasing number of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MA4E1338E1-1068T | M/A-Com Tech... | 0.0 $ | 1000 | SCHOTTKY PLASTIC 8V GUARD... |
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