MA4E2200E1-1068T Discrete Semiconductor Products |
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Allicdata Part #: | 1465-1222-2-ND |
Manufacturer Part#: |
MA4E2200E1-1068T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | SCH PLASTIC ZBD UNCONN PAIR |
More Detail: | RF Diode Schottky - 2 Independent 1.5V SOT-143 |
DataSheet: | MA4E2200E1-1068T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 2 Independent |
Voltage - Peak Reverse (Max): | 1.5V |
Capacitance @ Vr, F: | -- |
Resistance @ If, F: | -- |
Operating Temperature: | -65°C ~ 125°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes, more commonly referred to as radio frequency (RF) diodes, are a type of semiconductor device that can be used in various types of electronic circuitry. They have a wide range of applications in communications and electronics, such as waveguides, mixers, oscillators, and amplifiers, as well as being key components of important electronic components such as digital to analog converters and power amplifiers. The MA4E2200E1-1068T is a particularly popular choice for many applications due to its high gain and bandwidth as well as its low noise and good linearity characteristics.
The MA4E2200E1-1068T is a high-performance diode. It has an RF forward transmission frequency range of 200 MHz to 4 GHz, a typical gain of 11 dB, an operating voltage range of 2.5–5 V, a 0 dBm output power at a 5 V supply voltage, and a very low noise figure of 0.86 dB. It also has excellent linearity and low distortion characteristics. Additionally, the diode has a wide dynamic range of up to 40 dB, making it very well-suited for high-end applications where both low-noise performance and high linearity can be achieved in a single package.
The MA4E2200E1-1068T is a widely used device in various fields such as communication and broadcasting, WIFI, and radio systems. The key feature of this diode is its excellent noise properties. It can provide up to 43 dBc of phase noise which makes it ideal for applications where a low noise floor is desired. Additionally, it has a very low intermodulation distortion of -26 dBc, meaning it can be used in low distortion applications such as modulation systems.
The diode’s working principle can be described as follows. When current is applied to the PN junction, the device allows current to flow in one direction and not the other. This is commonly known as a rectifying effect, which is where the current is rectified, or changed to positive or negative, depending on the direction of current. This rectified signal is then amplified, filtered, and modulated to create the desired signal.
The MA4E2200E1-1068T is a versatile diode and has wide range of applications. It has excellent noise performance and linearity characteristics, making it an ideal choice for communication and broadcasting, WIFI, and radio systems. Its high gain and bandwidth, low noise figure, and low intermodulation distortion make it particularly suitable for modulated signal systems. Additionally, its wide dynamic range of up to 40 dB make it suitable for high-end applications.
The specific data is subject to PDF, and the above content is for reference
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