MA4E20541-1141T Allicdata Electronics

MA4E20541-1141T Discrete Semiconductor Products

Allicdata Part #:

1465-1219-2-ND

Manufacturer Part#:

MA4E20541-1141T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: SCHOTTKY PLASTIC SINGLE
More Detail: RF Diode Schottky - Single 3V 20mA SOD-323
DataSheet: MA4E20541-1141T datasheetMA4E20541-1141T Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 3V
Current - Max: 20mA
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Resistance @ If, F: --
Operating Temperature: -65°C ~ 125°C (TJ)
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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The MA4E20541-1141T is a high-performance Schottky diode featured with low noise figure and high linearity performance. With a peak reverse voltage of 30 V and a maximum forward current of 100 mA, it is suitable for a wide array of RF applications. The diode exhibits very low working current and is able to operate at a frequency range of 1.2-1.4 GHz.

The key characteristics of the MA4E20541-1141T make it ideal for RF applications such as high-speed wireless networks, cellular base stations, and satellite communications. The device also has excellent blocking protection, stability, and high isolation against RF interference. With its wide range of operating frequencies, high linearity, and exceptional reliability, the MA4E20541-1141T is an ideal choice for a wide range of applications.

The diode works on the principle of the Schottky diode where electrons are injected from a metal contact into a semiconductor material. In the MA4E20541-1141T, electrons are injected from the metal contact into the semiconducting material during forward-biased passes through the device. This allows the electrons to move freely through the device, creating electrical currents and allowing the device to operate at high efficiency.

In reverse-bias mode, the current flow decreases due to increased electrical fields that inhibit electron movement. This also reduces any unwanted interference or noise generated by the diode and prevents any unwanted breakdowns. The diode is also protected against any external disturbances outside the specified operating range thanks to its low reverse leakage current.

The MA4E20541-1141T is an important part of wireless communications. With its low noise figure and high linearity performance, it is an ideal choice for wireless networks, cellular base stations, and satellite communications. Its shielding ability and high isolation from RF interferences make it suitable for a wide range of RF applications. Its low working current and wide frequency range also make it an ideal choice for a wide array of applications.

The specific data is subject to PDF, and the above content is for reference

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