Allicdata Part #: | 1465-1027-ND |
Manufacturer Part#: |
MA4E2502H-1246 |
Price: | $ 2.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | HMIC SCHOTTKY HIGH BARRIER |
More Detail: | RF Diode Schottky 5V 20mA 50mW Die |
DataSheet: | MA4E2502H-1246 Datasheet/PDF |
Quantity: | 500 |
100 +: | $ 1.87268 |
300 +: | $ 1.68997 |
500 +: | $ 1.51641 |
1000 +: | $ 1.27890 |
2500 +: | $ 1.21495 |
5000 +: | $ 1.16928 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - Peak Reverse (Max): | 5V |
Current - Max: | 20mA |
Capacitance @ Vr, F: | 0.12pF @ 0V, 18GHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 50mW |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Package / Case: | Die |
Supplier Device Package: | Die |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MA4E2502H-1246 is a highly efficient diode designed for use in radio frequency (RF) applications. It is a general purpose, power efficient, and low cost diode designed for a wide range of RF applications. This diode can be used in all types of circuit designs for various signal conditioning, switching, and noise reduction. The diode is designed to limit the energy transfer from one circuit to another and is also extensively used for signal buffering.
The main application fields of the MA4E2502H-1246 are in radio frequency applications, signal conditioning and amplifier design. The diode is also used in power supply rectification, signal routing, high speed switching, FM modulation, speech processing and signal mixing. This diode is also used in voltage references and voltage regulation applications. It can also be used to construct tuned amplifiers, which is a very advantageous circuit design technique.
The operating principle of the MA4E2502H-1246 is based on the junction capacitance of the diode. This creates a changing electrical impedance in response to an applied signal. This effect results in a clamping or shortening of the signal resulting in a controlled voltage or current at the output. The output impedance of the device is dependent on the frequency, amplitude, and bias voltage applied to the diode. This allows for specific applications and design needs.
The device has a series of pins that are all connected to either an input or output, or both. The design of the diode allows for very fast switching times and a wide frequency range. The device also has high power dissipation, which makes it suitable for power amplifiers. The low noise level of the device makes it ideal for signal processing, signal conditioning, and signal routing applications.
The advantages of using this diode in radio frequency applications are clear. It has a wide signal bandwidth, high power dissipation capability, low noise, and fast switching times. This makes it a powerful and reliable tool for radio frequency engineering and design. Furthermore, due to its low cost, this diode is suited for implementation in a wide range of radio frequency applications.
The specific data is subject to PDF, and the above content is for reference
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