MAP4KE12CAE3 Allicdata Electronics
Allicdata Part #:

1086-4144-ND

Manufacturer Part#:

MAP4KE12CAE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 10.2V 16.7V DO204AL
More Detail: N/A
DataSheet: MAP4KE12CAE3 datasheetMAP4KE12CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 16.7V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 24A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 11.4V
Voltage - Reverse Standoff (Typ): 10.2V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The TVS - Diodes are widely used in the electronics world and its applications are vast. In this article, we will discuss the MAP4KE12CAE3, a specialized type of TVS - Diode, and its application field and working principle.

The MAP4KE12CAE3 is a bidirectional TVS (Transient Voltage Suppressor) - Diode specifically designed to protectelectronic lines from transients and high voltage overshoots. It features a unique, low capacitance struc ture, which allows it to provide superior protection from transient overvoltages while maintaining minimum disturbance to signal information to help protect data. The MAP4KE12CAE3 is diode clamped and is capable of handling up to 12A, and 1500W peak pulse power for up to 10/1000 microseconds.

The MAP4KE12CAE3 features fast responding avalanche breakdown, providing an effective ESD solution. The standard response time is less than 5 nanoseconds to meet ESD standards. The device also features low capacitance and highly optimized breakdown voltage for the application.

The primary application for the MAP4KE12CAE3 is surge and ESD protection for a wide range of electronics, including communications systems, industrial control systems, medical systems, automotive components, and consumer electronics. Its low capacitance and fast response rate make it ideal for protecting high speed signal lines, such as Ethernet and data lines. The device is also well suited for automotive applications, as it meets AEC-Q101 standards.

The MAP4KE12CAE3 TVS - Diode works on the principle of avalanche breakdown. Avalanche breakdown occurs when a reverse biased voltage is applied to a P-N junction, causing the depletion layer between the two materials to pinch off. This allows current to flow through the diode, resulting in an avalanche breakdown. The diode\'s breakdown voltage can be adjusted by controlling the doping and junction thickness of the diode. Once the breakdown voltage is reached, the current flow is limited to a safe value, protecting the circuit.

In summary, the MAP4KE12CAE3 TVS - Diode is a specialized device, specifically designed for fast and reliable protection of electrical lines from transients and other overvoltages, and its fast response rate and low capacitance make it ideal for protecting high speed signal lines. Its primary application are surge and ESD protection, and it meets AEC-Q101 standards. The MAP4KE12CAE3 works on the principle of avalanche breakdown.

The specific data is subject to PDF, and the above content is for reference

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