MAP4KE20CAE3 Allicdata Electronics
Allicdata Part #:

1086-4188-ND

Manufacturer Part#:

MAP4KE20CAE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 17.1V 27.7V DO204AL
More Detail: N/A
DataSheet: MAP4KE20CAE3 datasheetMAP4KE20CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 27.7V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 14.5A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 19V
Voltage - Reverse Standoff (Typ): 17.1V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

The MAP4KE20CAE3 is a transient voltage suppressor diode from Vishay. It is designed to protect equipment from voltage transients caused by electrical overstress (EOS) incidents such as ESD, lightning, and power surges. It also offers protection to data lines against power induction from RF, EMP, and ground loops.

Application Field

The MAP4KE20CAE3 diode is primarily intended for use in automotive systems and other medium- to high-voltage applications that are susceptible to voltage transients. This includes machines, automotive systems, telecom applications, and consumer devices that require surge protection. The device is also suitable for other applications such as unmanned aerial vehicles (UAVs), remote control systems, and industrial applications.

Working Principle

The working principle of the MAP4KE20CAE3 diode is based on the avalanche breakdown effect which occurs in a Si diode when the reverse breakdown voltage is reached. This effect occurs when electrons and holes become sufficiently numerous to create an electric field that is strong enough to cause current to flow through the diode.When a voltage transient reaches the MAP4KE20CAE3 diode’s breakdown voltage, the resulting current caused by the avalanche breakdown effect is diverted through the diode. This diverts the transient away from the connected components, thus protecting them from damage. The MAP4KE20CAE3 also has an integrated fuse to further reduce the risk of damage in cases of extreme voltage transients.The MAP4KE20CAE3 diode has an impressive peak pulse power rating of 1200 watts, resulting in improved surge protection compared to similar transient voltage suppressor diodes. Additionally, the diode has a wide operating temperature range of -55°C to 150°C, allowing it to be used in a range of environments and industrial applications.

Summary

The MAP4KE20CAE3 diode is a transient voltage suppressor designed to protect automotive systems and other applications against voltage transients such as ESD, lightning, and power surges. The diode works on the principle of avalanche breakdown, which occurs when the reverse breakdown voltage is reached. The resulting current created by the effect is diverted through the diode, thus protecting connected components from damage. The device also features an integrated fuse to further reduce the risk of potential damage. Furthermore, the MAP4KE20CAE3 offers an impressive peak pulse power rating of 1200 watts and has an operating temperature range of -55°C to 150°C.

The specific data is subject to PDF, and the above content is for reference

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