MAP4KE250CAE3

Voltage - Clamping (Max) @ Ipp:	344V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	1A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	237V
Voltage - Reverse Standoff (Typ):	214V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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MAP4KE250CAE3 TVS - Diodes Application Field and Working PrincipleMAP4KE250CAE3, also known as Movistar Zoon Telecom Series, is a transil type glass passivated avalanche surge suppressor diode. Being one of the types of TVS - Diodes, it is a bi-directional transient voltage suppressor, offering extremely low zener impedance along with low leakage. This capability makes MAP4KE250CAE3 an ideal component for applications needing protection from induced over-voltage transients, as well as from electrostatic discharges. It is designed specifically to safeguard confidential data lines, and other fragile electronic components, from the common type of fault that can be caused by induced voltage in high-speed USB applications and similar connections.The application field and working principles of MAP4KE250CAE3 are closely related. This specific TVS - Diode is mainly used in high-speed USB connections and similar data lines. The design of the device enables it to protect those lines from induced voltage transients by preventing current surge. The MAP4KE250CAE3 also acts as a capacitor, as the physical structure of the device consists of two tungsten electrodes with a dielectric layer between them. When an induced voltage tries to touch the base of the two electrodes, the device acts as a diode and blocks it. When the voltage between the two electrodes rises too high, the device\'s avalanche effect allows the voltage to be discharged without causing any fault.Another important functional characteristic of the device is its low leakage current, which ensures that a voltage above the breakdown voltage can be maintained for a longer period of time without getting discharged due to excessive current leakage. This is done by utilizing a low-temperature coefficient of the avalanche effect to keep the leakage current below a pre-specified value.Apart from increased protection from non-ideal voltage transients, MAP4KE250CAE3 also has excellent surge capacity and excellent transient clamping performance. It is typically used for applications that require both high surge current and high EMI/RFI attenuation.In summary, MAP4KE250CAE3 TVS - Diodes can provide the necessary protection for USB and similar data lines from induced voltage transients, and its low leakage current allows for better voltage protection. The device also offers excellent surge protection and EMI/RFI attenuation. The device is ideal for applications needing protection from induced over-voltage transients, as well as from electrostatic discharges.

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