MAP4KE39CAE3 Allicdata Electronics
Allicdata Part #:

1086-4232-ND

Manufacturer Part#:

MAP4KE39CAE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 33.3V 53.9V DO204AL
More Detail: N/A
DataSheet: MAP4KE39CAE3 datasheetMAP4KE39CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 53.9V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 7.5A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 37.1V
Voltage - Reverse Standoff (Typ): 33.3V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (transient voltage suppression) – diodes are becoming increasingly popular with engineers looking to protect their devices from overvoltage conditions, such as electrostatic discharges. MAP4KE39CAE3 is a specific type of TVS diode designed for low capacitance protection. It is designed to address a wide range of applications in the electronics industry, including automotive, industrial, and consumer electronics.

MAP4KE39CAE3 is a unidirectional protection diode that works in conjunction with an external component, such as a resistor or capacitor, to provide overvoltage protection. The diode is specifically designed to protect sensitive circuits from high-energy discharge events. The diode is capable of suppressing up to 65 W of energy from electrostatic discharges and other overvoltage conditions. The transient voltage suppression characteristic of the diode helps to reduce both voltage overshoots and overcurrent events.

The working principle of the MAP4KE39CAE3 diode utilizes the avalanche breakdown of its PN junction. When an overvoltage condition is detected, the diode enters a state of avalanche breakdown, wherein the voltage across the PN junction reaches a high enough level to cause the junction to break down. In this state, the diode begins to conduct, effectively diverting the overvoltage away from the sensitive circuitry and preventing damage.

The MAP4KE39CAE3 diode is capable of protecting a wide range of applications, including: computer peripheral ICs, touch control systems, mobile devices, battery charging circuits, and automotive electronic control units. It is also suitable for protecting consumer electronics, such as TVs, audio systems, and gaming systems. It is designed to effectively protect in a wide range of temperatures and environmental conditions, from -55deg to +125deg Celsius and up to 5V reverse stand-off voltage.

Overall, the MAP4KE39CAE3 is a robust, reliable, and cost-effective solution for engineers looking to provide overvoltage protection for their devices in a wide range of applications. The diode is built with low capacitance properties, allowing it to quickly respond to transient voltage changes, thus providing effective protection from damage caused by overvoltage events.

The specific data is subject to PDF, and the above content is for reference

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