MAP4KE7.5A Allicdata Electronics
Allicdata Part #:

1086-4265-ND

Manufacturer Part#:

MAP4KE7.5A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 6.4V 11.3V DO204AL
More Detail: N/A
DataSheet: MAP4KE7.5A datasheetMAP4KE7.5A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 11.3V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 35A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 7.13V
Voltage - Reverse Standoff (Typ): 6.4V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (transient voltage suppressors) diodes are an important component in the realm of power electronics, and the MAP4KE7.5A is a particular application field for the diode. Their most vital usage is as a protection system for electrical systems, particularly from overvoltage conditions, which may otherwise damage the system. To this end, the MAP4KE7.5A uses a thyristor based silicon avalanche diode to provide superior fast response time and superior surge capability.

The MAP4KE7.5A specifically is designed to provide 1500W peak pulse power protection for ICs, circuit boards, and transistors. It is important to note that the voltage rating of the device depends on the dynamic resistance of the device, thus changing the voltage rating and current requirement. It is used mainly as a protection against electrostatic discharge, which can damage sensitive electronics and other equipment.

The working principle behind the MAP4KE7.5A is one of avalanche breakdown. Here, a high electric field due to the applied voltage causes the depletion region between the junction to expand and the free electrons from the n-side to flow to the p-side. The electrons easily overcome the high potential barrier created by the diode junction and form a conducting channel.

When an excess voltage is applied, the voltage across the junction reaches the breakdown point, thus triggering an electric avalanche. This process causes additional free electrons to flow across the junction, creating a forward voltage in the diode. This voltage can be used to divert the excess current away from the application, protecting its functionality.

The MAP4KE7.5A specifically has a surge capability of 600W, a peak pulsed power of 1500W, a fast response time of 1ns, and an operating temperature range from -55°C to + 150°C. It also has a low capacitance of 8pF, and an equivalent series resistance of maximum 8O. It is designed to handle transients and surge currents without suffering damage.

The MAP4KE7.5A is an important diode for the purpose of surge protection, and its wide range of application fields, operating temperatures, and low capacitance allow it to be integrated into many different systems. With its ability to dissipate currents away from the system, it provides efficient protection from overvoltage conditions, protecting vital electrical systems.

The specific data is subject to PDF, and the above content is for reference

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