MB85RC64VPNF-G-JNERE1 Allicdata Electronics
Allicdata Part #:

865-1259-2-ND

Manufacturer Part#:

MB85RC64VPNF-G-JNERE1

Price: $ 0.84
Product Category:

Integrated Circuits (ICs)

Manufacturer: Fujitsu Electronics America, Inc.
Short Description: IC FRAM 64K I2C 1MHZ 8SOP
More Detail: FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) I...
DataSheet: MB85RC64VPNF-G-JNERE1 datasheetMB85RC64VPNF-G-JNERE1 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.76490
Stock 1000Can Ship Immediately
$ 0.84
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 64Kb (8K x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: --
Memory Interface: I²C
Voltage - Supply: 3 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The MB85RC64VPNF-G-JNERE1 is a memory device developed by Fujitsu Semiconductor. It is suitable for use in automotive, industrial, medical, and IoT designed applications. The MB85RC64VPNF-G-JNERE1 is a 4M-bit FRAM memory device that provides fast write and read operations compared to other kinds of nonvolatile memory. It is suitable for a range of applications such to ensure data reliability in automotive and industrial device, providing large capacity data storage, and providing buffer memory.

FRAM, or ferroelectric random-access memory, is a type of nonvolatile memory that utilizes ferroelectric materials as the gate part of the transistor. FRAM technology offers a number of advantages over other types of nonvolatile memory, such as being able to retain its data when the power is removed, being very robust in terms of wear-and-tear as well as being resistant to power shocks, and having much faster read/write speeds compared to other nonvolatile devices.

The MB85RC64VPNF-G-JNERE1 is an 8-pin serial access memory. It features an industry-standard I2C interface for easy integration into a wide range of applications. It has a CMOS-compatible voltage level of 2.7 to 5.5V and can withstand temperature ranges of 0 to 70°C operating temperature. The memory is organize into 64K words × 8 bits, divided into 64 segments.

The MB85RC64VPNF-G-JNERE1 is capable of fast write and read operations due to its proprietary ferroelectric CMOS circuit design, which offers an access time of just 30μs during a write operation and 10μs during a read operation. It also offers an unlimited write endurance, meaning that it can maintain its write speed even after an extended period of use. Additionally, it is also capable of providing a data retention time of up to 10 years.

In terms of safety features, the MB85RC64VPNF-G-JNERE1 is designed to comply with a wide range of international safety standards, including JEDEC, ISO, UL, and CSA, among others. It has a built-in ECC (error-correcting code) function to ensure the correctness of data written to the memory. Additionally, it has a built-in power-on reset (POR) function, which will reset the device when power is removed, thus ensuring that all stored data is recovered.

The MB85RC64VPNF-G-JNERE1 is suitable for a variety of applications, such as in automotive and industrial design, medical device design, and IoT design. It can be used to provide reliable data storage, with its quick read/write speed and long data retention time ensuring that data is secure and intact in the event of power loss. Additionally, it can be used as a buffer memory, providing the necessary resources required to provide smooth operation of applications.

The specific data is subject to PDF, and the above content is for reference

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