MCH3105-TL-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	800mW
Frequency - Transition:	360MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	3-MCPH

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MCH3105-TL-E application field and working principle

Introduction

MCH3105-TL-E is a high-performance single-ended N-channel enhancement mode field effect transistor (FET) specially designed for extremely low voltage applications. This device features an enhanced transistor architecture that provides the necessary combination of low on-state resistance, very low leakage current and excellent cutell characteristics to make it ideal for low voltage switching and blocking applications, such as DC-DC converters and level shifters.

Application Field of MCH3105-TL-E

MCH3105-TL-E is especially suitable for the following applications:

• DC-DC Conversion: MCH3105-TL-E can be used as a low voltage switch in a DC-DC conversion step-up circuit. It can switch between different voltages in a DC-DC conversion circuit, thus providing a power output with a different voltage level.
• Level Shifters: MCH3105-TL-E provides superior performance when used as a level shifter. This device can effectively shift a low voltage signal to a different voltage level, which is often required in analog systems.
• Power Management: MCH3105-TL-E is capable of providing a wide range of output voltages, depending on the input voltage. This makes it ideal for power management applications where it can perform voltage regulation.
• Automotive Applications: MCH3105-TL-E is suitable for automotive applications due its low on-state resistance, low leakage current and excellent cut-off characteristics. It can be used in automotive control systems and engine management systems for switches, regulators, and level shifters.

Working Principle of MCH3105-TL-E

MCH3105-TL-E is a field effect N-channel transistor which consists of a source, a drain and a gate. It works on the basis of the quantum mechanical principle of quantum tunneling. In this principle, electrons can tunnel through the oxide layer between the gate and the channel. When a positive voltage is applied to the gate, it causes an electric field to be generated around the gate. This electric field causes electrons to tunnel through the oxide layer and reach the channel, thus allowing current to flow through the transistor.MCH3105-TL-E\'s performance is determined by factors such as its on-state resistance, its drain-source Rds, and its cut-off characteristics. Low on-state resistance allows the transistor to dissipate less power during operation, thus increasing its efficiency. Low drain-source Rds indicates a reduced internal resistance, which enables the transistor to handle higher current levels. Excellent cut-off characteristics give the transistor the ability to shut off current flow when a certain voltage level is exceeded.

Conclusion

MCH3105-TL-E is a single-ended N-channel transistor specially designed for low voltage switching and blocking applications. This device offers excellent characteristics such as low on-state resistance, low leakage current, and excellent cut-off characteristics. It is suitable for a variety of applications including DC-DC converters, level shifters, power management and automotive control systems. Its performance is determined by factors such as its on-state resistance, its drain-source Rds, and its cut-off characteristics.

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