| Allicdata Part #: | MCH3209-TL-EOSTR-ND |
| Manufacturer Part#: |
MCH3209-TL-E |
| Price: | $ 0.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 30V 3A MCPH3 |
| More Detail: | Bipolar (BJT) Transistor NPN 30V 3A 450MHz 800mW S... |
| DataSheet: | MCH3209-TL-E Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.10530 |
| 6000 +: | $ 0.09851 |
| 15000 +: | $ 0.09172 |
| 30000 +: | $ 0.09058 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 155mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
| Power - Max: | 800mW |
| Frequency - Transition: | 450MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | 3-MCPH |
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MCH3209-TL-E is a type of bipolar (BJT) single chip transistor with a collector-emitter voltage range of 150V and a collector current of 3A. This type of transistor is commonly used in high power and high voltage applications, such as power electronic systems, power switching, and RF power amplifiers. It is also used in high-voltage DC-DC converters and high-voltage high-frequency DC-AC switches.
The MCH3209-TL-E is typically used in circuits that require a larger current carrying capacity than other BJTs. This is due to its relatively large collector-emitter voltage range and its ability to withstand high collector currents. Additionally, the MCH3209-TL-E provides excellent thermal performance thanks to its low thermal resistance and wide junction temperature range.
The working principle of the MCH3209-TL-E is based on the electrical properties of BJTs. A BJT is composed of three layers - an emitter, a base, and a collector. When a base-emitter voltage is applied, a current starts flowing into the base and is amplified by the collector-emitter current gain of the transistor. This amplified current is then amplified by the collector, and it is this amplified current that is then used in the application.
The MCH3209-TL-E is used in many high power and high voltage applications, including power electronic systems, power switching, RF power amplifiers, and high voltage DC-DC converters and DC-AC switches. This type of transistor is also well-suited for use in high-power audio amplifiers and low-noise preamplifiers. Additionally, its relatively low on-resistance makes it ideal for use in high power switching applications.
The MCH3209-TL-E is an effective and highly reliable bipolar transistor that is suitable for a wide variety of high power and high voltage applications. It has a reliable collector-emitter voltage range, an excellent junction temperature range, an impressive current carrying capacity, and a low on-resistance. This makes it a great choice for high power and voltage applications, including power switching and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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MCH3209-TL-E Datasheet/PDF