MD7P19130HR3

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 The MD7P19130HR3 is a RF MOSFET designed for use in multiple applications. It is a 50V/20A drain-source voltage MOSFET with an on-resistance of 0.13Ω max. at a gate-source voltage of 5V. It also features a continuous drain current of 31A. The device is well-suited for applications where high power efficiency is desired and low gate-source capacitance is required. Additionally, the device has a high breakdown voltage and high switching speeds, which make it suitable for high frequency operation.

The MD7P19130HR3 is widely used in RF applications due to its outstanding performance. It can be used in RF power amplifier (PA) circuits, RF switching circuits, RF detectors, and multiple other applications. Its high drain current, low gate-to-source capacitance, and high breakdown voltage make it an ideal choice for high frequency applications. The device is also suitable for use in wideband and multiband PA designs.

The working principle of the MD7P19130HR3 is based on the transfer of holes from the source to the drain. When a voltage is applied to the gate, the device will be in the “on” state, allowing current to flow from the source to the drain. When the gate voltage is increased, the drain to source resistance (or on resistance) will decrease, which increases the amount of current that can flow through the device. When the gate voltage is decreased, the device will be in the “off” state, preventing current flow.

The device is also capable of operating in both the enhancement and depletion modes. In the enhancement mode, a positive voltage applied to the gate will increase the on-resistance of the device, while a negative voltage will decrease the on-resistance. In the depletion mode, a negative voltage applied to the gate will increase the on-resistance of the device, while a positive voltage will decrease the on-resistance.

The device can also be used for sensitive RF circuit designs. Its gate-source capacitance of 0.016nF makes it attractive for those applications where low capacitance is required. Additionally, the on-resistance of 0.13Ω makes it ideal for use in high power amplifier designs. Finally, its high breakdown voltage and high switching speeds will allow it to operate without damage in a wide variety of applications.

The MD7P19130HR3 is an ideal device for RF applications. Its unique combination of performance characteristics, low on-resistance, and low gate-source capacitance make it a great choice for high frequency designs. Additionally, its high breakdown voltage and fast switching speeds make it suitable for use in sensitive circuits. Moreover, its wide operating range makes it a great choice for PA designs.

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