| Allicdata Part #: | MD7P19130HSR3-ND |
| Manufacturer Part#: |
MD7P19130HSR3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 2CH 65V 1.99GHZ NI780HS-4 |
| More Detail: | RF Mosfet LDMOS (Dual) 28V 1.25A 1.99GHz 20dB 40W ... |
| DataSheet: | MD7P19130HSR3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS (Dual) |
| Frequency: | 1.99GHz |
| Gain: | 20dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1.25A |
| Power - Output: | 40W |
| Voltage - Rated: | 65V |
| Package / Case: | NI-780S-4 |
| Supplier Device Package: | NI-780S-4 |
| Base Part Number: | MD7P19130 |
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MD7P19130HSR3 is an RF MOSFET transistor with a variety of uses. It is an n-channel enhancement-mode vertical MOSFET transistor that has high speed switching and low on-state resistance. This transistor is designed to operate in the VHF and UHF frequency bands and is suitable for a range of applications, including switching, low noise amplification, signal mixing and signal modulation.
The MD7P19130HSR3 is a high power MOSFET transistor with a breakdown voltage of 200V and an on-state resistance of 0.05 ohms. It can handle a peak power of up to 80W and a drain-source current of up to 16A. This transistor offers a wide range of features including high switching speed, high frequency output, low gate resistance and high current capacity. The package size makes it suitable for a wide range of applications, such as in mobile phone base stations, Wi-Fi radio systems and GPS receivers.
The working principle of the MD7P19130HSR3 is relatively simple. It is an n-channel MOSFET transistor, meaning that it relies on the opening and closing of an electric gate in order to control the flow of electricity through the channel. When the gate voltage is low, the transistor remains off and no current is allowed to flow through the channel. However, when a positive gate voltage is applied, the transistor turns on and the current is allowed to flow through the channel. The current is then amplified based on the size of the gate voltage.
The MD7P19130HSR3 is a versatile device that can be used in a variety of applications. Its main uses are in RF power amplifiers, power switching circuits, RF switches, and RF signal mixers. It can also be used as an audio amplifier, digital logic switch, and low noise amplifier. In addition, the MD7P19130HSR3 is also commonly used in telecommunication systems, such as mobile phone base stations and WiFi access points, due to its high frequency capabilities.
The MD7P19130HSR3 is a widely used device in the field of radio frequency applications due to its high speed and low on-state resistance. It offers excellent performance due to its low gate resistance and high current capacity. In addition, the package size makes it suitable for a wide range of applications, such as in mobile phone base stations, Wi-Fi radio systems and GPS receivers. For all these reasons, the MD7P19130HSR3 is one of the most popular MOSFET transistors on the market.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MD7P19130HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 2CH 65V 1.99GHZ NI... |
| MD7P19130HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 2CH 65V 1.99GHZ NI... |
| MD7P19130HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 2CH 65V 1.99GHZ NI... |
| MD7P19130HSR5 | NXP USA Inc | -- | 1000 | FET RF 2CH 65V 1.99GHZ NI... |
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MD7P19130HSR3 Datasheet/PDF