MD7P19130HSR5

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS (Dual)
Frequency:	1.99GHz
Gain:	20dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.25A
Power - Output:	40W
Voltage - Rated:	65V
Package / Case:	NI-780S-4
Supplier Device Package:	NI-780S-4
Base Part Number:	MD7P19130

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The MD7P19130HSR5 is a high-speed, high-performance and reliable N-channel MOSFET designed for radio frequency (RF) applications. Featuring a low on-resistance and excellent linearity performance, the MD7P19130HSR5 offers enhanced system performance in radio frequency (RF) amplifier-sensitive applications such as 5G, Wi-Fi and other strategies.

MD7P19130HSR5 Application Field

The MD7P19130HSR5 is suitable for use in various RF applications such as power amplifiers, RF amplifiers, microwave ovens, power amplifiers and bi-directional power amplifiers. Furthermore, due to its low-voltage and low-resistance operation, it is also ideal for use in high-efficiency, high-output performance applications such as wireless networks, broadband wireless access and cellular base stations.In particular, the MD7P19130HSR5 is ideal for use in wireless systems using the 5G standard which requires very high gain and low distortion ratios due to its wide bandwidth and low power consumption. With its high linearity and low distortion properties, the device offers excellent system performance in a variety of applications.

MD7P19130HSR5 Working Principle

The MD7P19130HSR5 MOSFET operates according to the principle of creating a voltage potential. Simply put, when a voltage is applied to the MOSFET’s gate, electrons are injected into the channel between the source and the drain. This injection of electrons creates a potential which causes current flow between the source and the drain.The MD7P19130HSR5’s channel width is 29mm and the channel length is 5.4mm. As a result, it has very low on-resistance and excellent performance in linearity and distortion. The MOSFET’s very low on-resistance also reduces unwanted power dissipation and increases circuit efficiency.Additionally, the MD7P19130HSR5 features a maximum drain-source voltage (VDS) rating of 20V and a maximum drain current (ID) rating of 5A. This ensures that the device can reliably handle a large amount of current and will not be damaged by excessive heat.

Conclusion

The MD7P19130HSR5 is an advanced and reliable N-channel MOSFET designed for high-performance and low-distortion RF amplifier applications. From offering excellent linearity and low distortion performance in high-end applications such as 5G, Wi-Fi and others, to its low-voltage and low-resistance operation, the MD7P19130HSR5 is the ideal choice for a variety of RF applications and is sure to deliver superb system performance.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description