| Allicdata Part #: | MMBT2907ALT3GOSTR-ND |
| Manufacturer Part#: |
MMBT2907ALT3G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 60V 0.6A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 300m... |
| DataSheet: | MMBT2907ALT3G Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 600mA |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
| Power - Max: | 300mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MMBT2907A |
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MMBT2907ALT3G is a singlePNP Bipolar Transistor (BJT) widely used in many electronic applications. It is also referred to as an NPN transistor because it is built using two N-type layers, with the second layer being a P-type epi layer, placed between the two N layers.
Due to its low voltage and low power consumption, MMBT2907ALT3G is often used in applications such as low voltage regulator circuits, general analog switches, low noise amplifiers, and high frequency pre-amplifiers. It has an air dielectric construction with an epoxy case and very low leakage current, making it suitable for high frequency applications.
The MMBT2907ALT3G comprises a B-C-E structure, meaning its base is also connected to its collector and so it acts as an NPN transistor. It operates in three modes: common base, common collector, and common emitter. The common base mode is used in low voltage applications where the transistor works as an amplifier. The common collector mode is used in switching applications where the transistor works as a switch or a driver. Finally, the common emitter mode is used in circuits where the transistor works as an inverter.
The MMBT2907ALT3G has a high safe operating area (SOA) which is important for electrical circuits that require protection against shorts and current surges. Its high SOA allows it to handle higher power and noise levels than other transistors in its class. This makes it a good choice for power amplifier, audio amplifier, and logic circuit applications.
The MMBT2907ALT3G\'s substrate is resistant to moisture and contaminants. Its package is made up of an epoxy-encased surface mount device, so it easily fits in most modern circuit boards. It also has an easy-to-wire dual gate feature, which makes it simple to wire up and connect.
The MMBT2907ALT3G is a versatile and reliable transistor that can be used in a wide range of applications. Its low voltage and low power consumption make it ideal for low voltage regulator circuits, power amplifiers, audio amplifiers, logic circuits, and general analog switches.
It also has a high SOA and is resistant to moisture, dust, and contaminants, making it highly reliable and ideal for high frequency applications. Its dual gate feature makes it easy to wire up and connect, and its epoxy-encased package makes it easy to mount on modern circuits and boards.
The specific data is subject to PDF, and the above content is for reference
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MMBT2907ALT3G Datasheet/PDF