MMBT3904WT1G Allicdata Electronics

MMBT3904WT1G Discrete Semiconductor Products

Allicdata Part #:

MMBT3904WT1GOSTR-ND

Manufacturer Part#:

MMBT3904WT1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.2A SOT323
More Detail: Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 150m...
DataSheet: MMBT3904WT1G datasheetMMBT3904WT1G Datasheet/PDF
Quantity: 312000
1 +: $ 0.01600
10 +: $ 0.01552
100 +: $ 0.01520
1000 +: $ 0.01488
10000 +: $ 0.01440
Stock 312000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MMBT3904
Description

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The MMBT3904WT1G is a widely used general-purpose NPN transistor, among the numerous types of transistors in the industry. This type of transistor is classified as a Bipolar Junction Transistor (BJT). It is a single, small-signal, NPN type transistor, which is typically mounted on a 0.1 inch pitch lead frame.

The MMBT3904WT1G has very low power consumption, high gain and low noise, making it an excellent choice for various types of applications. It is particularly suitable for applications involved in current regulation, amplification, switching, for use as a signal modulator or signal detector, as well as for many other purposes.

This transistor has a maximum emitter-collector voltage of 40V, continuous collector current of 200mA, and a maximum power dissipation of 625mW. It also has a high-voltage gain of 1.2, and a transient response time of 0.1 microseconds (µs). The minimum hfe is 100 at 5V, and the maximum hfe is 500 at 4V.

The MMBT3904WT1G transistor operates under a few basic principles. In order for it to conduct, there must be current flowing from the emitter to the collector. This is known as the forward-bias mode. On the other hand, when the current is flowing from the collector to the emitter, it is said to be in the reverse-bias mode. When the two leads, known as the base and the emitter, are connected to a voltage source, the transistor will act as an amplifier or switch.

The MMBT3904WT1G is used in many different electronic applications, including linear, analog and digital circuits. It is particularly popular in audio amplifiers, power transistors, and motor control circuits. It is also used in portable applications such as cell phones, laptops and digital cameras. Additionally, it can be used in high voltage applications that require high speed switching, and in digital logic circuits to conduct current at high speeds. For these reasons, the MMBT3904WT1G is a great choice for a variety of applications.

In summary, the MMBT3904WT1G is a very popular and versatile transistor. This single, small-signal, NPN type transistor is suitable for many different circuits and applications, including linear and digital circuits, audio amplifiers, power transistors and motor control circuits, and can be used in portable applications that require high speed switching. With it\'s low power consumption, high gain and low noise, the MMBT3904WT1G is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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