MMBT3906SL Allicdata Electronics
Allicdata Part #:

MMBT3906SLTR-ND

Manufacturer Part#:

MMBT3906SL

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.2A SOT-923F
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 227m...
DataSheet: MMBT3906SL datasheetMMBT3906SL Datasheet/PDF
Quantity: 200000
8000 +: $ 0.03572
16000 +: $ 0.03037
24000 +: $ 0.02858
56000 +: $ 0.02679
Stock 200000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 227mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-923F
Supplier Device Package: SOT-923F
Base Part Number: MMBT3906
Description

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The MMBT3906SL is a NPN small-signal surface mount transistor. It is used mainly in high-speed switching applications, such as transistor-transistor logic (TTL), digital integrated circuits (ICs), light emitting diode (LED) drivers, power management, and other sensing applications. The MMBT3906SL belongs to a class of transistors known as Bipolar Junction Transistors (BJT). BJTs are comprised of three components: a base, a collector, and an emitter, each made of silicon or other semiconductors. When an electric current is applied to the base, a conduction channel is formed between the collector and the emitter. This allows for current to flow from the collector to the emitter.

The MMBT3906SL has a variety of features that make it suitable for a wide range of applications. For instance, the device uses a high-voltage process, allowing it to handle a variety of voltages up to 40 volts, making it suitable for higher voltage applications. It also offers fast switching characteristics with a rise time of up to 200 nanoseconds and a fall time of up to 800 nanoseconds. Moreover, the device offers good current handling capability, with a current gain of up to 70, and a maximum collector current of up to 500 mA.

The working principle behind a BJT is based on the principle of a PN junction diode. The base electrode acts as the control element of the device, controlling the current between the collector and the emitter. When the base electrode is positively biased, a conduction channel forms between the collector and the emitter, allowing for current to flow from the collector to the emitter. Conversely, when the base electrode is negatively biased, the conduction channel is shut off and the transistor does not conduct.

The MMBT3906SL is highly versatile, making it suitable for a wide range of applications. It is used in many switching circuits, such as logic gates, power supplies, LEDs, and microcontrollers. It is also used in circuit designs that require a fast switching speed, such as in digital signal processing circuits. Additionally, the device can be used in industrial automation systems, such as robotics and control systems, as well as in medical equipment, such as MRI scanners, and automotive applications, such as safety systems.

The MMBT3906SL is a popular transistor due to its versatility and its ability to handle high current. It is an ideal choice for a variety of applications, including high-speed switching, logic circuits, power management, and sensing applications.

The specific data is subject to PDF, and the above content is for reference

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