MMBT3906TT1G Discrete Semiconductor Products |
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Allicdata Part #: | MMBT3906TT1GOSTR-ND |
Manufacturer Part#: |
MMBT3906TT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.2A SC75-3 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200m... |
DataSheet: | MMBT3906TT1G Datasheet/PDF |
Quantity: | 1560000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Base Part Number: | MMBT3906 |
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The MMBT3906TT1G is a versatile and commonly used transistor available in the market today. It is a bipolar junction transistor (BJT) that is specifically designed for a wide variety of applications. This article will discuss the application fields of this device and how its working principle contributes to its usage.
The MMBT3906TT1G is most commonly used as an NPN switching transistor. It is especially useful in certain circuits due to its low voltage gain and its wide voltage range. This device is capable of handling up to 40V of collector to emitter voltage and can be used at various levels of current up to a maximum of 500 mA. It also features a low leakage current and a high current gain of 80. This makes it an ideal choice for a wide variety of switching applications.
In addition to its usage in switching applications, the MMBT3906TT1G is also highly suitable for linear amplifying applications. It has a high current gain, making it ideal for low-voltage amplifying applications. It can be used with little to no external components, making it simple to use. The device is suitable for use in both audio and video amplifying applications.
Furthermore, the MMBT3906TT1G is also useful in sensor applications. It is extremely sensitive to light, making it a good choice for light sensing applications. It is also capable of detecting small changes in current and voltage, making it ideal for use in instrumentation applications. It can also be used for temperature sensing and current monitoring applications.
The MMBT3906TT1G\'s working principle is based on the phenomenon of base current amplification. This device has an internal base region which is made up of four semiconductor layers. These layers are capable of creating a mechanism that allows for current flow between the base and the collector of the device. When a small current is applied to the base and the corresponding voltage is supplied to the collector, a larger current is produced from the collector side of the device. This current amplification is what makes this device so useful in switching, amplifying, and sensing applications.
In conclusion, the MMBT3906TT1G is a versatile device that can be used in a wide array of applications. It is specifically designed for low voltage and current amplifying applications and is also useful in both linear and sensor applications. Its ability to produce significant current amplification is what makes it so valuable in these applications.
The specific data is subject to PDF, and the above content is for reference
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