MMBT4354

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 5V
Power - Max:	350mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBT4354

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The MMBT4354 silicon bipolar junction transistor is a commonly used electronic component, typically utilized in a variety of applications in the field of modern electronic engineering. As a general-purpose npn transistors, the MMBT4354 has become a popular choice for amplifying and switching applications across a variety of electrical systems.
The MMBT4354 is configured by two npn layers and features a nominal current gain of 300. To achieve the range of electrical characteristics set out by the manufacturer, the transistor has been designed to be operated at 2A, 45V and 5W. For these applications, the MMBT4354 will usually be used in a common emitter connection and is popular due to its ruggedness and compatibility.
Due to its properties and design, the MMBT4354 is most commonly used in amplifying, switching and dialing line circuits and systems. As an amplifier, the transistor is perfect for biasing and signal linear amplification purposes and can be used in a number of high-frequency applications. As a switch the transistor can be used in high-speed switching circuits, and dialing line circuits used in telephones and other communication systems.
The key to the MMBT4354’s success is its working principle. All bipolar junction transistors (BJT), such as the MMBT4354, rely on the principle of minority carriers and hole conduction. This works due to the central bipolar junction existing between the p-type and n-type components of the transistor device.
When an external base current is applied, free electrons and holes then move to the edges of the junction. This phenomenon is known as the base effect, where the amount of current flow is increased across the junction, depending on the amount of current supplied to the base electrode. It is this change in the amount of current flow which can be used to increase or decrease current flowing through the device.
The effect of the base current is then amplified by a factor known as the current gain, which for the MMBT4354 is stated as 300. This means that for every 200uA applied to the base of the MMBT4354, 0.6A of current will flow through the device.
The MMBT4354’s high gain and ruggedness make it a popular choice for a variety of applications in the field of modern electronic engineering. It is widely used in amplifying, switching and dialing line circuit applications and is reliable, despite its small size.

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