MMBT4355

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1V @ 100mA, 1A
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 10V
Power - Max:	350mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

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The MMBT4355 is a high-performance NPN small-signal silicon transistor, designed primarily for low power audio and general amplification applications. As a single, bipolar transistor, it is suitable for use as a pre-amplifier or low-noise amplifier.MMBT4355 features low voltage and low current requirements, making it ideal for operation in battery-powered applications. It also features a convert resistor to a transistor base pin, significantly reducing the size of the circuit and enabling the transistor to operate at higher frequencies. In addition, the MMBT4355 has excellent power dissipation characteristics, allowing for high performance at low temperatures.The MMBT4355\'s working principle is based on its own intrinsic bipolar junction transistor (BJT) characteristics. In a BJT, the base-emitter junction acts as a rectifier, allowing the transistor to have an output current that is proportional to the input voltage applied to it. This means that the magnitude of the output current is affected by both the magnitude of the input voltage and the current gain of the transistor.When operating in an amplifier, the MMBT4355 functions as an amplifier by using the output current of the base-emitter junction to create a larger signal in the collector load. This circuit is usually known as the common-emitter amplifier configuration, and it is the most common type of amplifier. The current gain of the transistor is determined by the ratio of the collector voltage to the base voltage, and is usually noted as \'hFE\', which stands for \'transconductance coefficient\'. Depending on the circuit configuration, the MMBT4355 can provide amplification gains of up to 140.Due to its low voltage, low current, and high power dissipation characteristics, the MMBT4355 is an ideal choice for a variety of small signal amplification applications such as audio preamplifiers, headphone amplifiers, medical instrumentation, and many other small-signal devices. It is particularly well-suited for applications in which a low-noise operation and stability are of paramount importance, such as radio communications and data acquisition.Moreover, the MMBT4355 is highly compatible with all types of integrated circuit packages, making it ideal for use in single and multi-channel circuits that require isolation, such as voltage comparators or multiplexers. It is also designed to provide a high level of protection from harmful EMI (electromagnetic interference), ensuring reliable operation in systems exposed to amplified noise. The MMBT4355 also offers a cost-effective solution for applications where small signal performance and reliability are essential. With its small size, accommodating pin layout, and low price, it offers users an unmatched combination of an enhanced signal-to-noise ratio, a low voltage and low current requirement, and excellent high frequency response. Overall, the MMBT4355 is an ideal choice for a wide range of applications requiring small signal amplifiers with excellent performance and reliability. With its wide compatibility and features, it is a cost-effective solution that meets the needs of many.

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