MMBT4401 Discrete Semiconductor Products |
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Allicdata Part #: | MMBT4401FSTR-ND |
Manufacturer Part#: |
MMBT4401 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 350m... |
DataSheet: | MMBT4401 Datasheet/PDF |
Quantity: | 132000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 350mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBT4401 |
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The MMBT4401 is a small signal switching transistor (Bipolar Junction Transistor, BJT) that is a member of the family of NPN transistors. As a member of the family, the MMBT4401 features two collector terminals and one base terminal, providing transistor functionality based on three junctions or connections. As a switching transistor, it is designed to operate over a wide voltage range from 6 to 100 Volts and support currents up to 1 Amp. The MMBT4401 also features a low voltage drop across its terminals for maximum efficiency.
Due to its simple design and reliability, the MMBT4401 is found in a wide array of applications in consumer electronics and industrial automation. In consumer electronics, the MMBT4401 can be found in remote controls, radios and other devices to provide switching functionality and signal amplification. In industrial automation, the MMBT4401 can be used to provide signal amplification and switching functionality in a variety of applications, ranging from controlling motors to operating machine tool controllers.
The working principle of the MMBT4401 relies on the NPN transistor structure. This structure consists of two collector terminals, a base terminal and an emitter terminal. When a positive current is applied to the base terminal, electrons are drawn out of the base and flow through the collector terminals. This flow of electrons creates an expanded current across the collector terminals that can be used for signal amplification and switching purposes.
In order to maximize its efficiency, the MMBT4401 features a low voltage drop across its terminals. This low voltage drop ensures that the most current possible is flowing across the terminals and helps to maintain a steady state in the system. It also helps to reduce power losses associated with other transistor designs. Additionally, the MMBT4401 has a direct operating temperature range of -65 °C to +175 °C, giving it a wide range of temperature stability.
The MMBT4401 is also designed with a wide collector-emitter breakdown voltage range from 6 to 100 Volts. This allows the MMBT4401 to be used in a wide variety of applications. In applications where the circuit can be exposed to higher voltages, the MMBT4401 can withstand voltages up to 100 Volts for reliable operation. Furthermore, the MMBT4401 can support currents up to 1 Amp, allowing it to be used in applications that require high currents.
Overall, the MMBT4401 is a reliable single bipolar junction transistor that offers a wide range of benefits in applications such as consumer electronics and industrial automation. Its simple design and low voltage drop across its terminals ensure that it can provide reliable operation and signal amplification in a variety of applications. Furthermore, its wide collector-emitter breakdown voltage range and current support allow it to be used in a wide variety of applications. Thanks to its robust design and reliability, the MMBT4401 is popular in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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