Allicdata Part #: | MMBT4401HLT1G-ND |
Manufacturer Part#: |
MMBT4401HLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A SOT23 |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | MMBT4401HLT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | -- |
Part Status: | Active |
Transistor Type: | -- |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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MMBT4401HLT1G Application Field and Working Principle
The MMBT4401HLT1G Transistor is a Bipolar Junction Transistor (BJT) that is used in applications like Switching and Low Current Amplifying. MMBT4401HLT1G is part of a family of transistors often used in complimentary circuits, to produce a wide range of gain and current control. It is available in different packages and is a reliable active component.
The MMBT4401HLT1G is a NPN transistor, with a Collector - Base voltage of 40 Volt and a Collector-Emitter voltage of 35 Volt. Maximum ratings for current include collector current of 50mA, Emitter current of 100mA and Base current of 5mA. Maximum power of 625mW and maximum Operating junction temperature of 150°C are some other limitations used in applications.
A large range of capacitances also exist with this component. This varies from junction capacitance of 5pF and transition frequency of 8GHz. These indicate the performance of the component.
An NPN bipolar junction transistor works on the principle of Electron flow. The Input current between the Base and Emitter determines the output current between the Collector and Emitter of the component. The DC current gain is calculated by altering the input and output current. When more current is driven towards base, more current flows out of collector. This is known as the Beta gain of the component. This transistor is Amplifying, so the input current is amplified and provided at the output as shown in the graph.
A more visual representation of NPN Bipolar Junction Transistor is provided in the above graph. Here the electrons travel from the Emitter, through the Base and reach the Collector. This current flow is obviously prevented from going from collector to emitter, due to this arrangement of the component.
The MMBT4401HLT1G Transistor is mostly used in switching and amplifying applications. This single transistor can be part of many complimentary circuits combined to form complex systems and modulated circuits. Bipolar transistors like the MMBT4401HLT1G are expected to work in conditions of high temperatures and fast signals. They are reliable and available as easy to use components for electronic applications.
The specific data is subject to PDF, and the above content is for reference
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