MMBT5087 Allicdata Electronics
Allicdata Part #:

MMBT5087TR-ND

Manufacturer Part#:

MMBT5087

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 350mW...
DataSheet: MMBT5087 datasheetMMBT5087 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 350mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBT5087
Description

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The MMBT5087 is a bipolar junction transistor (BJT) designed for analog, high-frequency switching and digital applications. It is a PNP transistor with a maximum Vceo rating of 30V and a “HFE” rating of 30mA. It is available in a surface-mount and through-hole package. This type of transistor is capable of switching up to 500MHz and is suitable for high-speed audio and switching applications.

The MMBT5087 is a versatile device that can be used for a variety of applications. It can be used in pre-amp circuits, voltage comparators, linear amplifiers, oscillators, audio amplifiers, logic level converters and more. The device can also be used in audio crossover networks to adjust the frequency response of speakers.

The MMBT5087 is the fundamental component of a bipolar junction transistor. It has three terminals: the collector (C), the base (B) and the emitter (E). The collector is the positive terminal and it is connected to the positive power supply. The base terminal is the input, and it is used to control the current flow between the collector and the emitter. The emitter is the negative terminal and it is connected to the negative power supply.

When the base terminal is biased with a suitable current, the current between the collector and the emitter will flow in an NPN geometry. This current, referred to as the base current, is controlled by the voltage at the base terminal, and the transistor will amplify this current. As the base current increases, the collector current also increases and reaches its saturation level when it surpasses the current at the emitter. When the collector current is at its saturation level, the voltage at the collector terminal will drop and the transistor will enter the “off” state.

The MMBT5087 is a useful device for a variety of applications. It is capable of handling large currents and is suitable for use in high-frequency switching applications. It is also well suited for pre-amp circuits and for use in logic level converters. Its versatility makes it an excellent choice for those looking for an easy-to-use and reliable device for their application.

The specific data is subject to PDF, and the above content is for reference

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