MMBT5550LT1G Allicdata Electronics
Allicdata Part #:

MMBT5550LT1GOSTR-ND

Manufacturer Part#:

MMBT5550LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 140V 0.6A SOT23
More Detail: Bipolar (BJT) Transistor NPN 140V 600mA 225mW Sur...
DataSheet: MMBT5550LT1G datasheetMMBT5550LT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 225mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT5550
Description

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Introduction

The MMBT5550LT1G is a small signal, NPN, Bipolar Junction Transistor (B JT) with a small footprint and low power consumption. It has a maximum current of 200mA and a maximum voltage of 70V. It has two different packages available. It can be used for various applications due to its low power consumption and small size.

Application field

The MMBT5550LT1G has a number of different applications, including amplifier circuits, audio amplifiers, and signal switching circuits. The power consumption and small size make it ideal for use in low power applications such as analog signal processing, computers, communication systems, and automotive applications. This transistor can also be used in audio amplifiers, as it is able to amplify signals without distortion.

Working Principle

The MMBT5550LT1G is a NPN type device, which means it has three layers; the emitter, the base, and the collector. When a current is applied to the emitter, a number of electrons are released. These electrons are attracted to the base and create a current. This current is then collected by the collector and is amplified to a higher potential. The amount of current that is produced is determined by the bias applied to the base.

Advantages and Limitations

One of the main advantages of the MMBT5550LT1G is its small size and low power consumption, which makes it ideal for use in a variety of applications. Additionally, since it is a NPN type device, it is easily integrated into circuits and can be used in a variety of different applications. Another advantage is that it has a useful voltage range of up to 70V, allowing it to be used in high current applications. Despite its many advantages, the MMBT5550LT1G is limited by its current capacity, as it has a maximum current of 200mA. Additionally, it does not have a very fast switching speed, making it unsuitable for certain applications.

Conclusion

The MMBT5550LT1G is a small signal, NPN, Bipolar Junction Transistor (B JT). It has a number of applications, including amplifier circuits, audio amplifiers, and signal switching circuits. Its low power consumption and small size make it ideal for use in low power applications. Additionally, the MMBT5550LT1G has a useful voltage range of up to 70V and has the ability to amplify signals without distortion. Despite its many advantages, the MMBT5550LT1G is limited by its current capacity and slow switching speed.

The specific data is subject to PDF, and the above content is for reference

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