MMBT5551LT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	160V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Power - Max:	225mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBT5551

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Introduction

MMBT5551LT1G is a bipolar junction transistor (BJT) which falls into the category of single transistors. This transistor is used in various applications which need to have a good electrical performance, such as high-speed switching, amplification, data processing and so on. This article will discuss the application field and working principle of the MMBT5551LT1G transistor.

Application Fields

The MMBT5551LT1G transistor is mainly used in the fields of switching, video and various related applications. It is also used in audio or high frequency applications such as communications, computer systems and medical systems. In switching applications, the MMBT5551LT1G can provide excellent performance. It is used in low, medium and high power switching applications, with all of them requiring good electrical performance. It is also used in high-speed applications due to its high transition frequency. The transistor is also often used for video and related applications. Here it is mainly used for the amplification of signals and the regulation of signals. The transistor is also used in audio and communication applications. It provides good performance for audio applications and has a good transition time which makes it suitable for communication applications.

Working Principle

The MMBT5551LT1G is a bipolar junction transistor, which means that it is made of a PNP and an NPN structure. The transistor consists of three parts, the emitter, the collector and the base. The emitter of the transistor is the emitter of the PNP or the NPN structure while the collector is the collector of the PNP or NPN. The base is an isolation region between the two junctions and it is used to control the current flow between the PNP and NPN structures.When a voltage is applied to the base, it allows electrons to flow from the emitter to the collector, thereby creating a current. This current can then be used to power a circuit. The gain of the transistor is determined by its structure and is usually denoted by the letter h. The gain of the transistor increases with increasing base current. The MMBT5551LT1G has a maximum collector dynamic current of 500mA, an input capacitance of 5pF and a maximum operating temperature of 100°C. It is also available under a variety of packages such as TO-220, SOT, and the MT series.

Conclusion

The MMBT5551LT1G is a bipolar junction transistor which falls into the category of single transistors. It is used in various applications such as switching, audio, video, communications and medical systems. The transistor works by allowing electrons to flow from the emitter to the collector, which results in a current. It has a good electrical performance, with a collector dynamic current of 500mA, an input capacitance of 5pF and a maximum operating temperature of 100°C. The gain of the transistor is determined by its structure and is usually denoted by the letter h.

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