MMBT8099LT1G Allicdata Electronics
Allicdata Part #:

MMBT8099LT1GOSTR-ND

Manufacturer Part#:

MMBT8099LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 150MHz 225m...
DataSheet: MMBT8099LT1G datasheetMMBT8099LT1G Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 225mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT8099
Description

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MMBT8099LT1G is a tpye of NPN bipolar junction transistor (BJT) that is known for its fast switching times and wide band aplications. It is used in a variety of applications such as high-speed switching and amplification. The transistor features low input capacitance, which helps it achieve good frequency response. Additionally, it has wide temperature operating rang and can be used in different temperature environments.

MMBT8099LT1G has three terminals—the collector, base, and emitter, which are connected to each other in a specific configuration. The collector is the most positive terminal, while the base is the most negative terminal and the emitter is the neutral terminal. When current is applied to the base, it triggers a reaction in the transistor and allows current to flow between the collector and emitter.

The MMBT8099LT1G can be used in a variety of applications. It is commonly used as an amplifier, oscillator, or switch. It has a low power consumption, which makes it ideal for use in portable devices. It also has a wide band of operation, which makes it useful for a variety of applications.

The working principle of the MMBT8099LT1G is based on the principle of electron flow. Electrons from the base are attracted to the collector, while electrons from the emitter are repelled to the collector. This flow of electrons causes current to flow through the transistor. This phenomenon is known as current gain. When the base current is increased, the collector current is increased accordingly.

MMBT8099LT1G transistors are widely used in the fields of communications, digital electronics, automation, defense, medical, and automotive electronics. In communications, the transistors can be used for high frequency switching, power amplification, and filtering. In digital electronics, they are used for logic gates and other integrated circuits. In automation and defense, they can be used to control motors, sensors, and actuators. In medical, they are used in medical imaging and other medical instruments. In automotive, they are used in engine control, in-vehicle entertainment, and other devices.

In conclusion, the MMBT8099LT1G is a type of NPN bipolar junction transistor (BJT) that is widely used in the fields of communications, digital electronics, automation, defense, medical, and automotive electronics due to its low input capacitance, wide operating temperature range, and low power consumption. It is typically used as an amplifier, oscillator, or switch due to its wide band of operation and fast switching times. The working principle of the transistor is based on the principle of electron flow, which causes it to have current gain when the base current is increased.

The specific data is subject to PDF, and the above content is for reference

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