MMBTA06LT1G Allicdata Electronics

MMBTA06LT1G Discrete Semiconductor Products

Allicdata Part #:

MMBTA06LT1GOSTR-ND

Manufacturer Part#:

MMBTA06LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 225m...
DataSheet: MMBTA06LT1G datasheetMMBTA06LT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBTA06
Description

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.
The MMBTA06LT1G is a Transistors - Bipolar (BJT) - Single device that is built for a variety of applications. This device is an NPN transistor that is designed to provide low voltage switching to a variety of electronic circuits. This type of transistor is usually used in desense application like amplifier, oscillator, and wireless communications circuits. This device is designed using the latest in semiconductor technology and offers a variety of features that make it ideal for many different applications. Due to its small form factor and low operating voltage, the device is often used in applications where small form factor and low power requirements are desired. It also has an improved current gain as well as a low saturation voltage which makes it suitable for a variety of circuits. The MMBTA06LT1G also comes with an integrated heat sink that helps manage heat and ensure consistent performance in high temperature environments. The working principle for this type of transistor is based on the three transistor action. This means that when a current is applied to the circuit, electrons will flow from the emitter to the collector while a base current is also applied. This base current will then control the magnitude of the collector current. When using an NPN transistor, the collector current flows in the same direction as the base current which will then control the flow of the emitter current. The MMBTA06LT1G also includes other features such as a built in self-protection circuit that helps regulate the current to help protect the device from damage due to overvoltage or overcurrent conditions. It also is rated for a wide operating temperature range and can be used in a variety of applications from consumer to industrial applications. Lastly, the device is lead free and RoHS compliant, making it compliant with the new environmental regulations. In terms of its application field, this transistor can be utilized in many different areas such as in amplifier, oscillator, and wireless communications circuits. It is also suitable for applications that require low voltage switching, low power requirements and small form factor. This device can also be used in automotive, consumer, industrial, medical and defense applications.Overall, the MMBTA06LT1G is a great choice for many applications due to its small form factor, low operating voltage, and improved current gain. It also comes with an integrated heat sink and has built in safety features to help protect the device. Lastly, it is compliant with current environmental regulations and is rated for a wide operating temperature range.

The specific data is subject to PDF, and the above content is for reference

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