MMBTA56LT1G Allicdata Electronics

MMBTA56LT1G Discrete Semiconductor Products

Allicdata Part #:

MMBTA56LT1GOSTR-ND

Manufacturer Part#:

MMBTA56LT1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 225mW...
DataSheet: MMBTA56LT1G datasheetMMBTA56LT1G Datasheet/PDF
Quantity: 237000
1 +: $ 0.01600
10 +: $ 0.01552
100 +: $ 0.01520
1000 +: $ 0.01488
10000 +: $ 0.01440
Stock 237000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBTA56
Description

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Transistors - Bipolar (BJT) - Single

The MMBTA56LT1G is a PNP single-bipolar transistor with a maximum collector current of 0.5 A. Its maximum collector-emitter voltage is 30V and its guaranteed transition frequency is 190MHz. This device is specifically designed for high performance, low power applications.

Application Field

The MMBTA56LT1G is commonly used for small signal switching and digital applications such as drivers, amplifiers, and motor drivers. It is also great for general-purpose switching applications where a low-cost solution is desired. It is especially suited for automotive applications where low power consumption, fast response time, and high-fidelity are critical.

Working Principle

As with any other bipolar junction transistor (BJT), the MMBTA56LT1G operates using the principles of charge coupling and current flow. In brief, the capacitor formed between the emitter and collector plays a key role in the operation of the transistor. When the base is biased, the movement of charge carriers (holes and electrons) is controlled by the magnitude of the current being applied to the base. This modulates the current flow between the emitter and collector, allowing the device to be used in either an amplification or switching circuit.

In terms of switching speed, the MMBTA56LT1G switch is capable of responding to changes in its base voltage in a fraction of a millionth of a second. This makes it a suitable choice for applications where speed is of utmost importance, such as in optical communications systems.

Advantages of Using MMBTA56LT1G

  • Low cost
  • Small size
  • High switching speed
  • Fast response time
  • Low power consumption
  • High performance characteristics

The MMBTA56LT1G is an ideal choice for applications where speed, size, and cost are paramount. Its low power consumption, coupled with its small size, makes it an excellent choice for mobile and automotive applications.

Conclusion

The MMBTA56LT1G is a single-bipolar transistor that is specifically designed for high performance, low power applications. It offers excellent switching speed, low power consumption and small size, which makes it suitable for applications where speed and cost are paramount. Its excellent performance characteristics make it an ideal choice for use in automotive applications.

The specific data is subject to PDF, and the above content is for reference

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