MMBV109LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
Capacitance @ Vr, F:	32pF @ 3V, 1MHz
Capacitance Ratio:	6.5
Capacitance Ratio Condition:	C3/C25
Voltage - Peak Reverse (Max):	30V
Diode Type:	Single
Q @ Vr, F:	200 @ 3V, 50MHz
Operating Temperature:	125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBV109

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MMBV109LT1G is a varactor diode, also known as a variable capacitance diode. It is a three-terminal semiconductor device that has a tunable capacitance, which makes it suitable for use in voltage-controlled oscillators, frequency converters, frequency multipliers, bandpass filters, and other circuits and systems that require a tunable capacitance. The MMBV109LT1G is a low-power, low-voltage varactor diode that is primarily designed for use in cellular phones and other RF communications applications. It is a PN junction diode that consists of a P-type substrate and a N-type surface-barrier layer. The diode is manufactured using a standard VHF process, which provides it with excellent performance characteristics.The MMBV109LT1G has a capacitance range of 0 to 2.2 pF, and a typical capacitance of 0.5 pF. Thevaractor diode also has a low series resistance of 1 Ω, which results in excellent tuning linearity andmaximizes voltage controlled oscillator (VCO) performance. The diode also features low capacitance variations due to mounting forces and temperature, which makes it very suitable for use in precision applications. In terms of its application fields, the MMBV109LT1G is mainly used in the following areas: automotive, cellular phones, cable TV and satellite communications, RF radio and broadcasting, amplifier applications, and other RF communication systems.The working principle of the MMBV109LT1G is similar to that of any other varactor diode. When a voltage is applied between the anode and cathode of the diode, a reverse leakage current flows through the junction. The amount of current flowing through the junction is proportional to the applied voltage, and this changes the junction capacitance, thus allowing the capacitance of the diode to be varied. The capacitance of the MMBV109LT1G can be controlled by varying the applied voltage, allowing it to be used in VCOs and frequency multipliers, allowing the frequency of the circuit to be tuned. This diode is also ideal for use in band-pass filters, allowing filters of different center frequencies to be easily and accurately generated. In summary, the MMBV109LT1G is a low-power, low-voltage varactor diode that is mainly used in the automotive, cellular phones, cable TV and satellite communications, RF radio and broadcast, and other RF communication systems. Its working principle is based around the fact that when a voltage is applied between the anode and cathode of the diode, a reverse leakage current flows through the junction, changing the junction capacitance and thus allowing the capacitance to be tuned. This diode is ideal for use in voltage-controlled oscillators, frequency converters, frequency multipliers, and other circuitry that require adjustable capacitance.

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