Allicdata Part #: | MMBV3401LT1OSCT-ND |
Manufacturer Part#: |
MMBV3401LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE TUNING SS 35V SOT23 |
More Detail: | RF Diode PIN - Single 35V 200mW SOT-23-3 (TO-236) |
DataSheet: | MMBV3401LT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 35V |
Capacitance @ Vr, F: | 1pF @ 20V, 1MHz |
Resistance @ If, F: | 700 mOhm @ 10mA, 100MHz |
Power Dissipation (Max): | 200mW |
Operating Temperature: | 125°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBV3401 |
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The MMBV3401LT1 is a highly specialized diode for a wide range of applications. It is a three-terminal device specifically designed for high frequency radio frequency (RF) applications. As such, it is capable of operating in the frequency ranges of 0.1 MHz - 3 GHz.
Owing to its design, the MMBV3401LT1 provides a wide range of advantages over its competitors. The device offers a low-impedance junction and low parasitic capacitance, both of which are essential for optimal performance in HF/RF circuitry. Additionally, the MMBV3401LT1 also offers a low-noise profile, reducing signal degradation and improving overall performance of the circuit it is a part of.
The MMBV3401LT1 is used in a variety of RF applications, ranging from tactical radio equipment to signal filtering. Its low-impedance junction and low parasitic capacitance makes it ideal for use as a non-inverting amplifier with a moderate dynamic range. It is also commonly used in broadband radiofrequency selective switching applications and signal repetition filters. Additionally, it is also used in RF circuits operating at high frequencies, such as satellite communication systems as well as high-frequency radar systems.
The MMBV3401LT1 is composed of two PN junctions, connected in series. The two PN junctions are allowed to be forward biased, allowing the current flow through the junction. The current flow is controlled by the voltage applied to the anode and cathode terminals, allowing for easy adjustment and regulation of the current flow. The MMBV3401LT1 also has a built-in resistor, which is connected between the anode and cathode and acts as a load.
The MMBV3401LT1 has a wide range of features that make it ideal for RF applications. It is immune to thermal runaway, providing stable operation over a wide temperature range. Additionally, it offers high power handling capacity, and is capable of operating at high frequencies up to 3 GHz. Furthermore, it also has a low-noise profile, which reduces signal degradation and improves overall performance.
The MMBV3401LT1 is a high-performance, high-frequency diode designed specifically for radio frequency applications. Its features make it ideal for non-inverting amplifier applications, signal filtering, radiofrequency selective switching, and other high-frequency applications. Its low-impedance junction, low parasitic capacitance, and low-noise profile, make it a great choice for any application requiring high performance in the RF range.
The specific data is subject to PDF, and the above content is for reference
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