MMBV3401LT1G Discrete Semiconductor Products

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The MMBV3401LT1G is a small signal surface-mount Schottky Diode, optimized to achieve the highest performance in RF applications, with regard to size and speed. It is suitable for a variety of uses including, low-frequency diode switching, detector and mixer circuits, rectification inmicrowave oscillators and RF circuits, RF pre-amplifiers and RF power amplifiers. With its low forward voltage drop, and high speed switching, the MMBV3401LT1G is well suited for these applications.

The MMBV3401LT1G is constructed from two PN junctions connected in a reverse parallel configuration, also known as a Schottky barrier. This is a form of rectification or switching in which a voltage drop occurs when a forward bias is applied, effectively blocking currents from flowing in the opposite direction. This allows the MMBV3401LT1G to operate as a rectifier and make it a highly efficient choice for RF applications.

In terms of performance, the MMBV3401LT1G has a maximum forward current of 180 mA, meaning it can handle substantial continuous current while maintaining a low forward voltage drop of 0.35V. In addition, with a maximum reverse voltage of 200 V, the MMBV3401LT1G is well suited for higher-voltage RF applications. It is also capable of switching speeds up to 60 GHz, with a capacitance of typically 4.2 pF to 6.2 pF, making it suitable for high frequency applications.

In terms of its application fields, the MMBV3401LT1G performs well in a variety of different roles. It can be used for low-frequency diode switching, detectors and mixer circuits, rectification in RF circuits and RF power amplifiers, as well as RF pre-amplifiers. As a result, it offers a degree of versatility that makes it highly attractive for many different radio equipment designs.

Overall, the MMBV3401LT1G is a highly versatile low forward voltage drop Schottky barrier rectifier and switch, optimized for RF applications. It offers superb performance with regard to size and speed, and is capable of handling up to 200V of reverse voltage. The MMBV3401LT1G is an ideal choice for those building high-performance radio equipment, thanks to its versatility, low forward voltage drop and high switching speeds.

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