MMBV3401LT3G

Overview

The MMBV3401LT3G is a low-cost, high-performing low noise amplifier (LNA) that operates in the 800 MHz to 890 MHz frequency range. It is manufactured by Central Semiconductor and is suitable for use in a variety of microwave, industrial and military applications.

Applications

The MMBV3401LT3G is mainly used in radio communications applications such as cellular base stations, LTE/5G base station terminals, RADAR systems and so on.

It can also be used in non-commercial applications such as satellite communications, satellite navigation systems, data links and remote sensing.

Features

The MMBV3401LT3G offers a wide range of features, including:

• Low noise figure of 0.98 dB
• High gain of 18 dB
• High sensitivity of -14 dBm
• High linearity of 0.88 dB
• High output power at +20 dBm
• Wide dynamic range of 70 dB
• Excellent reverse isolation of 30 dB
• Dust-proof & moisture-proof design

These features make the MMBV3401LT3G the choice for high-performance RF amplification.

Working Principle

The MMBV3401LT3G is a two-stage LNA, with a high-gain input stage and a low-noise output stage. The input stage consists of a pHEMT device, which provides a large input impedance and low noise figure. The output stage is composed of a Lo-noise amplifier, which provides high gain and good linearity.

In operation, the input signal is amplified by the input stage, with additional amplification provided by the Lo-noise amplifier stage. The amplified signal is then passed to the output port with minimal noise added by the LNA itself.

Conclusion

The MMBV3401LT3G is a high-performance LNA that is suitable for many different RF applications. It has a wide dynamic range and excellent linearity, making it a great choice for high accuracy RF amplification. The combination of the input and output stages provides strong signal gain with low noise and excellent isolation, making it a valuable component in any RF circuit.