MMBV2107LT1 Allicdata Electronics

MMBV2107LT1 Discrete Semiconductor Products

Allicdata Part #:

MMBV2107LT1-ND

Manufacturer Part#:

MMBV2107LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE TUNING SS 30V SOT-23
More Detail: Varactor Single 30V Surface Mount SOT-23-3 (TO-236...
DataSheet: MMBV2107LT1 datasheetMMBV2107LT1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Capacitance @ Vr, F: 24.2pF @ 4V, 1MHz
Capacitance Ratio: 3.2
Capacitance Ratio Condition: C2/C30
Voltage - Peak Reverse (Max): 30V
Diode Type: Single
Q @ Vr, F: 350 @ 4V, 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The MMBV2107LT1 is an N-channel depletion-mode varactor diode with a high capacitance ratio. The MMBV2107LT1 features a low series resistance, low series capacitance, and low junction capacitance. It also has an extremely low reverse leakage current. The MMBV2107LT1 is ideal for high frequency applications such as RF frequency generation, radio receivers, and other RF tuning applications.

Varactor diodes, also known as varicaps, varactors, and capacitance diodes, are semiconductor devices that function as voltage-controlled capacitors. The MMBV2107LT1 is a depletion-mode varactor diode, which means that it has an internal depletion layer that is controlled by a reverse bias voltage. Applying an external voltage across the diode creates a reverse bias over the depletion layer, resulting in a decrease in the depletion layer thickness, and thus the capacitance of the diode. Conversely, reducing the reverse bias voltage increases the depletion layer thickness and thus the capacitance of the diode.

The MMBV2107LT1 is designed to be used as an adjustable capacitance element in RF applications. By applying an adjustable reverse bias voltage, the capacitance of the MMBV2107LT1 can be tuned to match the desired frequency. This makes the MMBV2107LT1 ideal for use in frequency-selective circuits, such as those found in radio receivers and transmitters.

The MMBV2107LT1 can be used in any application that requires an adjustable capacitance element, such as voltage-controlled oscillators, crystal oscillators, pressure sensors, and voltage-controlled RF oscillators. It is also used in RF tuning applications, such as television tuners, radio receivers, and other radio-frequency equipment. The MMBV2107LT1 can also be used in RF amplifiers, RF filters, and RF limiters.

The MMBV2107LT1 offers a number of benefits over traditional varactor diodes. It has a high capacitance ratio, meaning that a small change in voltage produces a significant change in capacitance. Additionally, the MMBV2107LT1 features a low series resistance and low series capacitance, making it ideal for high-frequency applications. The low junction capacitance and low reverse leakage current also make it an excellent choice for RF tuning applications.

Overall, the MMBV2107LT1 is an ideal choice for any application that requires a variable capacitance element. With its high capacitance ratio, low series resistance, and low junction capacitance, the MMBV2107LT1 is an excellent choice for any RF tuning application. The low reverse leakage current also makes it well-suited for use in RF amplifiers, RF filters, and RF limiters.

The specific data is subject to PDF, and the above content is for reference

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