MMBV2109LT1G Allicdata Electronics
Allicdata Part #:

MMBV2109LT1GOS-ND

Manufacturer Part#:

MMBV2109LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE TUNING SS 30V SOT23
More Detail: Varactor Single 30V Surface Mount SOT-23-3 (TO-236...
DataSheet: MMBV2109LT1G datasheetMMBV2109LT1G Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Capacitance @ Vr, F: 36.3pF @ 4V, 1MHz
Capacitance Ratio: 3.2
Capacitance Ratio Condition: C2/C30
Voltage - Peak Reverse (Max): 30V
Diode Type: Single
Q @ Vr, F: 200 @ 4V, 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBV2109
Description

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Diodes come in many shapes and sizes, and the Variable Capacitance (Varicaps, Varactors) types can be used in a wide variety of applications. The MMBV2109LT1G is an interesting example of this type of diode, and it can be used in a variety of roles, such as RF tuning and frequency synthesis. It is an n-type, switched capacitor diode, meaning that the voltage across its terminals alters the capacitance between them. It is designed for use in applications operating at frequencies of up to 40GHz, making it well-suited for high frequency applications.

The basis of the MMBV2109LT1G is its p-n junction, where a high doping concentration provides a signal across its terminals that can vary based on the reverse-bias voltage applied. This signal is known as a parallel capacitance. This capacitance can be used to determine the capacitive reactance of the device, and the current through the diode. The signal then alters the capacitance, noting that the capacitance is reduced when the signal increases, and increased when the signal decreases. This is known as a large signal effect.

The variant of the device, MMBV2109LT2G, also has an additional input that can be used to modify the capacitance which can further affect the signal. This external capacitance, or parasitic capacitance, is used to provide additional control over the device. This makes it ideal for use in applications requiring precise control over the signal. It is also important to note the type of external capacitor that is used with the device, as the incorrect type may result in reduced performance.

An important feature of the MMBV2109LT1G is its wide tunability range. This means that the capacitance range can be adjusted over a wide range, allowing for more precise control over the signal. This range of gain can be used in a variety of applications, including RF tuning and frequency synthesis. It is also important to note that, while the device operates at a highly impressive frequency range, the low noise figures and reduced non-linearity in the device make it well-suited for use in applications requiring low distortion, such as cellular base stations.

The MMBV2109LT1G is a versatile and capable device, with a wide range of tunable capacitance that can be used in a variety of applications. It has a wide range of gain and low noise figures, making it well-suited for high-frequency applications. Furthermore, its wide range of gain makes it ideal for applications requiring precise control of the signal, such as RF tuning and frequency synthesis. While it is an impressive device, it is important to note the type of external capacitor used to ensure it is not adversely affected by the parasitic capacitance.

The specific data is subject to PDF, and the above content is for reference

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