MMFT2N02ELT1

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 150°C (TJ)
Power Dissipation (Max):	800mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	580pF @ 15V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	150 mOhm @ 800mA, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	1.6A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Digi-Reel®

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MMFT2N02ELT1 is a single-resistant field-effect transistor (FET) manufactured by Recom. It is a low threshold voltage device with low capacitance values and low RDS(on) that is ideally suited for RF amplifier, switch, and interface applications. The integrated circuit operates at a voltage of 2V and its maximum source drain voltage is 24V. This product is also well-suited for use in high-frequency applications such as Wi-Fi, Bluetooth, and satellite communications.The single-resistant field-effect transistor (FET) is a three-terminal semiconductor device which makes use of both majority and minority carriers. The MMFT2N02ELT1 has an n-channel FET which gives it low noise and high input impedance. The gate terminal (G) of the FET can be used to control the current flow between the source (S) and drain (D) terminals by providing a positive or negative voltage.The MMFT2N02ELT1 has a very low threshold voltage which is important for MOSFETs in applications involving high-frequency switching. The very low threshold voltage will also result in low input and output capacitance, reducing the power dissipation during switches and hence improving the circuit performance.The field-effect transistor is different to the conventional BJT or bipolar junction transistor in that it uses a voltage applied to a gate electrode which is in an insulated state from the channels. This voltage creates a discrete electric field which changes the conductivity of the channel between the drain and source. By varying the voltage applied to the gate, the level of conductivity and hence current flow, between the drain and source, can be controlled.In the case of the MMFT2N02ELT1, the gate terminal will accept either a positive or negative voltage of up to 24V. If a positive voltage is applied to the gate, then the resistance between the source and drain terminals will be reduced resulting in a higher current flow. Conversely, if a negative voltage is applied, then the resistance will be increased and the current flow will be decreased.The MMFT2N02ELT1 is designed for use in many applications such as RF amplifiers, switches, and interfaces. The low input and output capacitance will improve the efficiency of switching applications and reduce power dissipation. In RF applications, the MMFT2N02ELT1 will provide an ideal high frequency response for Wi-Fi, Bluetooth, and satellite communications.The MMFT2N02ELT1 is manufactured with a variety of features to improve the performance and reliability of the product. The integrated circuit is designed with a core voltage of 2V with a maximum source drain voltage of 24V, which makes it suitable for use in a wide range of applications. The extremely low threshold voltage will ensure better performance in high-frequency switching applications while the low capacitance values provide improved efficiency and lower power dissipation. In addition, the device is RoHS-Compliant, Pb-Free, and Halogen Free.In conclusion, the MMFT2N02ELT1 is a single-resistant field-effect transistor that is ideal for use in RF amplifier, switch, and interface applications. The device has a very low threshold voltage, low RDS(on), and low capacitance, making it suitable for use in high-frequency applications such as Wi-Fi, Bluetooth, and satellite communications. The integrated circuit is designed with a core voltage of 2V and a maximum source drain voltage of 24V for improved performance and reliability. The device is also RoHS-Compliant, Pb-Free, and Halogen Free.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description