MMFT5P03HDT1

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.56W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	950pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3.7A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

MMFT5P03HDT1 is an N-channel enhancement-mode field effect transistor (FET) manufactured by STMicroelectronics that is well suited for high-frequency applications. The MMFT5P03HDT1 offers a number of unique features compared to traditional transistors, including a gate-source voltage rating of up to +/-20V and a drain-source breakdown voltage rating of up to 300V. In addition, the MMFT5P03HDT1 offers very low ON-resistance and very high transconductance.

Application fields

The MMFT5P03HDT1 can be used in a wide variety of applications, such as power amplifiers, power supplies, inverters, converters, and switching regulators. It is also well suited for high frequency applications such as radio receivers, RF amplifiers, and cellular handsets. It is particularly beneficial in applications that require high-speed switching and low power dissipation.

Working Principles

The MMFT5P03HDT1 is an N-channel enhancement-mode field effect transistor (FET). As such, it relies on the movements of electrons in a semiconductor material, such as silicon, to form a transistor. The MMFT5P03HDT1 is unique in that it takes advantage of a uniquely designed “gate” layer, which can be selectively “turned on” or “turned off” by controlling an applied electric field. This field can be applied through a gate pin to modulate the amount of current that flows between the drain and source.When the gate pin is in the off state, no electric field is applied and no current is able to flow between the drain and source. In the on state, however, an electric field is applied to the gate pin, causing electrons in the channel layer to move, forming an electric channel, which allows electric current to flow from the drain to the source.

Conclusion

The MMFT5P03HDT1 is a versatile, N-channel MOSFET designed for use in a wide variety of applications that require low power dissipation and high-speed switching. It is well suited for high-frequency applications and offers a gate-source voltage rating of up to +/-20V and a drain-source breakdown voltage rating of up to 300V.

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