MPS2369RLRAG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	400nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 10mA, 1V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	MPS2369

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MPS2369RLRAG Application Field and Working Principle

Transistors - Bipolar (BJT) - Single are used to amplify signals and as switches. They also can be used to form oscillators and provide feedback circuits. The MPS2369RLRAG corresponds to the particular type of single bipolar junction transistor (BJT). It is a N-channel device and is suitable for various applications such as drivers for electrolytic or optical switches, Darlington circuits and high-frequency switching circuits. It is also used for DC or low frequency amplifiers and for signal switching by providing a complex control characteristic.

MPS2369RLRAG Physical Structure

The MPS2369RLRAG is a 3-terminal device with a collector, base and emitter terminal. It consists of two N-type semiconductor junctions between the collector and emitter, and the base and emitter. The junctions provide an electrical connection between the collector and emitter and form the conductive path for electron flow.

MPS2369RLRAG Working Principle

The MPS2369RLRAG has a current gain of hFE which is a measure of the amount of current that can be amplified. When base current flows through the junction between the base and emitter, it creates a depletion region which causes a higher voltage drop between the collector and emitter. This results in an increased electric field which increases the current gain of the transistor. By controlling the amount of base current, the collector current can be changed and this can be used to amplify signals.

MPS2369RLRAG Application Field

The MPS2369RLRAG is often used in various applications such as amplifiers, drivers for electrolytic or optical switches, Darlington circuits, DC or low frequency amplifiers, signal switching, and high-frequency switching circuits. For instance, in audio amplifiers, the MPS2369RLRAG can be used as an electronic switch which is activated by a voltage signal. This allows the amplifier to turn on or off a signal, which can be then amplified. In addition, the MPS2369RLRAG can be used in DC or low frequency amplifiers, allowing the amplifier to amplify small voltage signals.In Darlington circuits, the MPS2369RLRAG is used to increase the current gain of a circuit due to its high current gain. This allows signals to be amplified to a greater level than that of conventional circuits. The transistor is also used in high-frequency switching circuits, as it is able to quickly switch between high and low voltage.The MPS2369RLRAG is also used in drivers for electrolytic or optical switches. These switches can be activated or deactivated using the MPS2369RLRAG. The transistor can be used to regulate the current and voltage needed to operate the switch, providing superior switching performance over conventional switches.

Conclusion

The MPS2369RLRAG is a single bipolar junction transistor (BJT). Its current gain of hFE makes it suitable for various applications, including amplifiers, drivers for electrolytic or optical switches, Darlington circuits, DC or low frequency amplifiers, signal switching, and high-frequency switching circuits. The transistor provides an effective solution to controlling current and voltage, allowing it to be used in a variety of applications.

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