MPS2907AZL1G Allicdata Electronics
Allicdata Part #:

MPS2907AZL1G-ND

Manufacturer Part#:

MPS2907AZL1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 0.6A TO-92
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625m...
DataSheet: MPS2907AZL1G datasheetMPS2907AZL1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPS2907A
Description

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MPS2907AZL1G Application Field and Working Principle

MPS2907AZL1G is a type of bipolar transistor (BJT) designed to operate with a single collector and emitter configuration. This type of transistor is commonly used in circuit applications ranging from low voltage and current sensing to power output and large signal amplifications.

The basic working principle of MPS2907AZL1G is that it is comprised of three terminals, the base, collector and emitter. An electric current is applied to the base of the transistor while it is biased tiny voltage. The current passes through the transistor’s base into the collector, where it is amplified and sent to the emitter, where current to the load is supplied. The gain of the transistor is determined by the ratio of the collector current to the base current. When using MPS2907AZL1G, it is important to note that the gain of the transistor is determined by the configuration of the device itself.

MPS2907AZL1G transistors are typically used to amplify weak signals, switch large currents, and provide protection against overcurrent or overvoltages. They are often used in the power offers of receivers and audio amplifiers, as well as servo drives, power converters, and voltage regulators. In addition, the cost-effectiveness and robustness of MPS2907AZL1G devices lend it to a variety of circuit applications.

MPS2907AZL1G transistors feature high collector current up to 500 mA, and low saturation voltage down to 0.2 V. The power dissipation of MPS2907AZL1G is quite high, up to 625 mW. The maximum voltage that can be applied between the collector and emitter is 40 V, making it suitable for many circuit applications. The devices offer high current and voltage gains and feature high switching frequency.

The main advantages of MPS2907AZL1G transistors are their low cost, fast switching and robustness. They offer a high packing density and have a low saturation voltage, making them a great choice for applications where high current is needed but voltage drops must be kept to a minimum. Additionally, MPS2907AZL1G transistors are relatively easy to use due to their simple configuration.

In conclusion, MPS2907AZL1G is a type of bipolar transistor (BJT) commonly used in a variety of circuit applications. It features a single collector and emitter configuration, with collector currents up to 500mA, and saturation voltages down to 0.2V. The power dissipation is also high with maximum wattage of 625mW. In addition, the device offers high current and voltage gains, high switching frequency and is relatively easy to use due to its simple configuration.

The specific data is subject to PDF, and the above content is for reference

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