MPSA06_D27Z Allicdata Electronics
Allicdata Part #:

MPSA06_D27Z-ND

Manufacturer Part#:

MPSA06_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 625m...
DataSheet: MPSA06_D27Z datasheetMPSA06_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA06
Description

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MPSA06_D27Z application field and working principle

The MPSA06_D27Z is a type of bipolar junction transistor (BJT) designed to switch and amplify electrical signals. It is typically used in switching circuits and amplifiers, and has applications areas in communications, automotive electronics, consumer electronics, and others.

BJTs are three-terminal devices in which two terminals, the collectors and the emitter, are connected in a loop, and the third terminal, the base, is connected between the collector and the emitter to control the current flowing between the collector and the emitter. BJTs are typically classified into two types: NPN and PNP, which differ in the manner in which they conduct current between the collector and the emitter. The MPSA06_D27Z is an NPN BJT.

The MPSA06_D27Z has a few unique features that make it particularly suited to certain applications. It has a control-gate voltage rating of 70 V, and a peak collector current of 800 mA, which makes it well suited for higher-power applications. It also has a good power dissipation rating of 800 mW, making it a good choice for heat-sensitive applications. Additionally, it has a low on-state voltage drop, which is beneficial in certain switching applications.

The working principle of the MPSA06_D27Z is based on a junction of an N-type semiconductor region and a P-type semiconductor region, forming a diode junction. When a small current is applied to the base of the transistor, a large current is able to flow through the collector-emitter loop, allowing the transistor to act as a switch. By varying the base current, the amount of current flowing through the collector-emitter loop can be controlled, thus allowing the transistor to act as an amplifier.

The MPSA06_D27Z transistor is a versatile component with numerous applications, including communications, automotive electronics, consumer electronics, and others. Its high control-gate voltage rating, peak collector current, power dissipation rating, and low on-state voltage drop make it a suitable choice for higher-power and heat-sensitive applications. Its working principle is based on the PN junction, allowing it to act as both a switch and an amplifier.

The specific data is subject to PDF, and the above content is for reference

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