Allicdata Part #: | MPSA05GOS-ND |
Manufacturer Part#: |
MPSA05G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 625m... |
DataSheet: | MPSA05G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSA05 |
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The MPSA05G is a single-bipolar Transistor (BJT) component used for many high-voltage, high-frequency applications. It is part of the transistor family, which is available in two choices - NPN and PNP, and is designed for general purpose applications. The primary difference between the two is the amount of voltage used to operate the component.
Due to its size and efficiency, the MPSA05G is suitable for a wide range of applications. These include high-power amplifiers and drivers, high-side switches, DC-DC conversion, SMS-message interfaces, power management switches, power amplification for audio applications, radio frequency (RF) circuits, and pulse width modulation (PWM) drivers.
The MPSA05G is ideal for use on printed circuit boards (PCBs) due to its small footprint, making it suitable for modern compact designs. It also offers a low saturation voltage, fast switching speed, and low thermal resistance. Together with its high current rating and excellent thermal stability, the MPSA05G is well-suited for use in many high-performance applications.
To start with, the MPSA05G has a collector-emitter breakdown voltage (BVceo) of 80V and a continuous collector current (Ic) of 15A. The maximum junction temperature is rated at 175 degrees Celsius while the power dissipation is 1W. The switching performance of the device is outstanding with a turn off time (tON) of 1µs and a turn off time (OFF) of 2.5µs.
In addition, the MPSA05G has a wide gain bandwidth product (fT) of 30MHz and a maximum transition frequency (ft) of 5GHz. It also has a collector to substrate (ES) capacitance of 5pF, collector to base (CB) capacitance of 5pF, and an emitter to base (EB) capacitance of 5pF. The device also has a low input noise voltage at 13.2 mV and a low output noise voltage at 8.2 mV.
The MPSA05G is based on the common-base topography, which enables a low junction capacitance and a large gain bandwidth. In a common-base configuration, the emitter is connected to the collector to form a common base, while the base is connected to the emitter. This configuration reduces the effect of capacitance and switch capacitance, resulting in improved switching speed and high current gain.
The MPSA05G is a simple and efficient device with low operating power consumption. The device has low voltage consumption, enabling designers to reduce the power consumption and improve system stability and reliability. Also, the device has low input voltage and current requirements, making it suitable for battery powered applications.
In conclusion, the MPSA05G is an ideal choice for modern application and design. It offers outstanding performance and excellent thermal stability, and is ideal for use in high power and high-frequency applications. With its low saturation voltage, fast switching speed, and low thermal resistance, the MPSA05G is an excellent choice for any system.
The specific data is subject to PDF, and the above content is for reference
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