MPSA12RLRA Allicdata Electronics
Allicdata Part #:

MPSA12RLRA-ND

Manufacturer Part#:

MPSA12RLRA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 20V TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 20V 62...
DataSheet: MPSA12RLRA datasheetMPSA12RLRA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA12
Description

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MPSA12RLRA is a type of bipolar junction transistor (BJT) designed for use in high-current and high-power applications. It features a 2 Amp collector current rating, making it suitable for power amplification and high speed switching. It also has an excellent breakdown voltage rating of 600 Volts, making it ideal for high voltage applications.

The MPSA12RLRA is a standard NPN type BJT consisting of an emitter, collector, and base electrode. Like other BJT transistors, the MPSA12RLRA relies on the passage of electric current through its base electrode to control the current flow between its collector and emitter electrodes. The current flow between the collector and emitter is referred to as the "collector current" and is directly proportional to the amount of current flowing through the base.

The ability of a transistor to control current is determined by its gain, or "hFE", which is the ratio between its collector current and its base current. The higher the hFE, the greater the gain and the better the transistor can control the flow of collector current. The MPSA12RLRA has an hFE rating of 60, which is quite good for a transistor of this type.

The MPSA12RLRA has a variety of applications, from high-power switching and high-speed amplification to low voltage-drop and current sense applications. In high-power switching applications, the MPSA12RLRA can be used to provide fast switching speeds while controlling large amounts of current. It can also be used in high-speed amplifiers to provide high gain and precise control of signal levels. In low-voltage drop applications, the low hFE rating of the MPSA12RLRA allows it to be used in voltage regulator circuits.

In addition, the MPSA12RLRA can also be used in current sensing applications, such as in power supply circuits. By mounting the MPSA12RLRA right at the load, it can sense when the current becomes too high and switch off the power before the load is damaged. This helps to protect the circuit from over-currents, ensuring that it remains safe and functional.

Overall, the MPSA12RLRA is a highly versatile and reliable BJT that is suitable for a wide variety of applications. Its high collector current rating and excellent breakdown voltage rating make it ideal for high power and voltage amplification applications, while its low hFE rating allows it to be used in voltage regulator circuits and current sensing applications. As a result, the MPSA12RLRA is an excellent choice for any application that requires reliable current control and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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