
Allicdata Part #: | MPSA14GOS-ND |
Manufacturer Part#: |
MPSA14G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 30V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 30V 500m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 125MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSA14 |
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MPSA14G is a type of bipolar junction transistor (BJT) specifically categorized as a single transistor. It is a low-power NPN transistor with a typical power dissipation of 500mW (milliwatts) and a DC collector current of 600mA (milliamperes). This transistor is typically used in amplifier applications, switch mode power supplies, switching circuits and interface circuits.
The MPSA14G is part of the 400V family of high-voltage BJTs. It features high-voltage breakdown, great stability, and low noise characteristics, making it ideal for use in high-end consumer electronics, such as large-screen TVs, LCD monitors, and digital projection TVs. It can also be used in industrial applications such as motor control, medical imaging, and audio amplifiers.
The MPSA14G is based on a very simple circuit structure. It consists of three pins: base, collector, and emitter. The base is used to control the flow of current from the collector to the emitter. When a positive voltage is applied to the base of the transistor, it allows current to pass from the collector to the emitter resulting in an amplified voltage at the emitter. The output voltage available at the emitter is proportional to the input current at the base and is used to control the flow of current in various circuits.
The working principle of the MPSA14G can be understood in the context of transistor action. Transistor action is governed by a phenomenon called "majority carriers", where the majority of current carriers are majority holes and electrons. The majority carriers are responsible for conduction through the transistor when the base voltage is higher than the cut-off voltage, typically 0.2V to 0.6V. This is called "forward-bias", where the majority carriers in the base region will be diverted to the collector and establish a current path from the collector to the emitter.
When the base voltage drops below the cut-off point, the transistor is said to be "reverse-biased", and no current is allowed to pass through the transistor. This state can be used to turn the transistor off, or to reduce the gain of the circuit. When forward-biased, the current gain of the MPSA14G can be as high as 100.
The MPSA14G is also sensitive to ambient temperatures. Heat must be taken into account when it is used in applications where the temperature can vary. The transistor is usually protected against over-temperature through the use of heat sinks, or through the use of special insulation layers. Another important consideration is the power dissipation of the transistor which must stay within the rated values.
In summary, the MPSA14G is a single transistor which is mainly used in high-end consumer electronics for amplifying signals, and in industrial applications for motor control and medical imaging. It is a low-power NPN transistor with a typical power dissipation of 500mW, a DC collector current of 600mA and a current gain of 100. Heat must be considered in order to protect the transistor from over-temperature and to maintain the power dissipation within the rated values.
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