MPSA56RLRMG Allicdata Electronics
Allicdata Part #:

MPSA56RLRMGOSTB-ND

Manufacturer Part#:

MPSA56RLRMG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 625mW...
DataSheet: MPSA56RLRMG datasheetMPSA56RLRMG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA56
Description

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MPSA56RLRMG is a single bipolar junction transistor (BJT) manufactured by ON Semiconductor, Inc. It is a small signal transistor with NPN Darlington, epoxy-coated package and built-in impedance.

The MPSA56RLRMG has various applications and uses. It is mostly used for switching and amplifying small signal audio and low frequency signals. It is also used as a driver for relays, lamp drivers and motor/heat control. In addition, it can be used for DC to DC converters, timing circuits and general purpose power switches.

The maximum rated collector current for the MPSA56RLRMG is 20mA. The collector-emitter voltage is 40V. The gain bandwidth product is 40 MHz. The total power dissipation is 4W. The maximum rising and falling time of this transistor is 8ns.

The MPSA56RLRMG works using the same principles as other BJTs. When the base is connected to a voltage source, the base-emitter junction is forward-biased, allowing a current to flow into the collector. The current gain of the transistor is determined by the ratio of the collector current to the base current. The ratio is called the current gain of the transistor, or the gain-bandwidth product.

The MPSA56RLRMG is protected against both over-current and reverse currents. The current flow is controlled by the voltage applied on the base of the transistor. The higher the voltage, the higher the current. The transistor can be overdriven by increasing the base drive to the point of saturation.

The MPSA56RLRMG is also protected against thermal runaway. Whenever the temperature of the transistor increases, the current also increases. This can be dangerous, as the transistor will continue to draw current until it reaches a point where it can no longer dissipate the heat or the base current will cut off. This prevents damage to the transistor and associated components.

The MPSA56RLRMG is widely used for switching and amplifying small signals. Its robust design and reliability make it suitable for a variety of applications. It is an ideal choice for DC-DC converters, timing circuits, heat and motor control, and low frequency signal amplification. Its benefit of small size, high portability, and easy integration make it ideal for use in embedded and mobile applications.

In conclusion, the MPSA56RLRMG is an excellent choice for its versatile use in amplifying and switching small signals. It is reliable, robust, and currently makes practical use in a variety of electronics applications.

The specific data is subject to PDF, and the above content is for reference

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