MPSA20G Allicdata Electronics
Allicdata Part #:

MPSA20GOS-ND

Manufacturer Part#:

MPSA20G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.1A TO92
More Detail: Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 625m...
DataSheet: MPSA20G datasheetMPSA20G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: MPSA20
Description

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The MPSA20G is a single bipolar junction transistor (BJT) designed to offer users high-speed performance and current-handling capability in a variety of applications. Developed by Motorola Semiconductor Corp. in the early 2000s, it is based on the same core technology used to make other transistors, but with several added features, such as low noise, high current-handling capability, and high-speed operation. With its high-speed response capability, the MPSA20G can be used for both linear and digital applications. In addition, its low profile and low capacitance make it a good choice for user-friendly applications.

The MPSA20G is available in a through-hole package, allowing the installation to be done easily, and making it a cost-effective way to achieve higher performance in a number of applications, such as power amplifiers, audio and video applications, and control systems. It is also a great choice for applications requiring high-speed operation and a low-power consumption rating.

The MPSA20G operates on a simple three-terminal architecture, consisting of the collector, emitter and base. The base and emitter terminals have a reverse-biased PN junction, while the collector is where the collector current flows. The collector current is generated by the movement of holes from the collector to the base, which is driven by the application of voltage at the base terminal. The current flow is then controlled by the base-emitter voltage.

When a voltage is applied to the MPSA20G, the base-emitter junction forms a reverse-biased PN junction, which confines the current flow from the base to the collector. This is known as the active region, where the transistor begins to operate in its active mode. The current flow between the collector and the emitter is then regulated by the application of an external voltage to the base terminal.

When compared to other transistor types, the MPSA20G offers a number of advantages. It has a high switching speed, allowing it to respond quickly to input signals. This helps to reduce switching time in applications that require a fast response time. It also has a low power consumption rating, which means it can operate more efficiently. Furthermore, the collector-emitter voltage rating is very high, allowing it to handle more current than other transistors.

The MPSA20G is widely used in voltage amplifiers, driver circuits, and power amplifiers, due to its low-noise design and high-speed operation. In addition, it is used in digital logic applications such as logic gates and multiplexers, due to its low-power consumption and fast switching speed. Finally, it is also a popular choice for many audio and video applications, due to its high current-handling capability and good linearity.

The MPSA20G is a great option for a variety of applications, offering users reliable and efficient performance with a low power consumption. Its high-speed response time and low-noise design make it ideal for both linear and digital applications, while its high current-handling capability makes it suitable for power amplifiers and other high-current applications. Its low profile and low capacitance make it a cost-effective choice for any user.

The specific data is subject to PDF, and the above content is for reference

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