MPSA64 Allicdata Electronics
Allicdata Part #:

MPSA64CS-ND

Manufacturer Part#:

MPSA64

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP DARL 30V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 500m...
DataSheet: MPSA64 datasheetMPSA64 Datasheet/PDF
Quantity: 7943
Stock 7943Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Description

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MPSA64 is an epitaxial monolithic, NPN, Silicon planar transistor. It is classified as a single bipolar junction transistor (BJT) which can be applied for powerful switching operations for general-purpose amplifier applications. It is commonly used in wide-band amplifiers, gain regulators and control units, logic circuits, and switching circuits. This device is housed in the TO-92 package form.

MPSA64 transistor can handle maximum power dissipation (PD) of 500 mW with a range of collector-emitter voltage resistances from 3.2V to 18V. It also has high voltage gain (hFE) up to 200 and a collector current (Ic) of up to 1.5A with a collector-base capacitance (Ccb) of 2.1pF. The base-emitter voltage (Vbe) is typically 1.3V at Ic = 0.1mA. This device is capable of operating at frequency up to 400MHz and can withstand a peak current up to 3A and achieve a gain of 25dB or greater.

MPSA64 is a versatile transistor due to its wide range of application. As mentioned above, it can be used for powerful switching operations for general-purpose amplifier applications. It can also be used for switching and noise reduction due to its wide frequency response. This device has the ability to reduce harmonic distortion, suppress interference, minimize noise, and minimize power consumption in the system. Furthermore, MPSA64 is suitable for use in power biasing and voltage-controlled current sources to regulate the supply current that flows into an amplifier.

The working principle of the MPSA64 transistor is similar to other NPN transistors. When a small base current is applied, a large collector-emitter current can be obtained. The base-emitter junction of the MPSA64 transistor is forward biased and this creates a region of minority carriers that are located near the base. When the base-collector junction is forward biased, a larger number of minority carriers are available and it results in large collector-emitter current. This large emitter-collector current “pumps” more carriers out to the collector terminal and this results in amplification of the incoming signal.

The MPSA64 is a versatile transistor that can be used for a variety of applications. Its wide frequency response and low noise capability make it suitable for both logic circuits and switching operations. Moreover, it can be used to reduce power consumption, reduce harmonic distortion, and minimize external noise. Finally, its ability to regulate the supply current makes it suitable for power biasing and voltage-controlled current sources.

The specific data is subject to PDF, and the above content is for reference

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