
Allicdata Part #: | MPSA44RLRAOSCT-ND |
Manufacturer Part#: |
MPSA44RLRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 0.3A TO92 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 300mA 625mW Thr... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSA44 |
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The MPSA44RLRA is a single Iridium-plated NPN bipolar junction transistor (BJT) designed for low noise RF applications. A bipolar transistor contains two P-N junction at its core, which enable it to act as a switch in applications like amplifiers, transistors, and oscillators. It has been designed for applications such as automotive infotainment systems, satellites, cell phones, and other wireless communication networks. The device has a wide range of advantages such as high sensitivity, low noise figure, and increased linearity.
The MPSA44RLRA has a gain of 20dB and a linearity of 20dBm. The device has a low noise figure of 0.6dB, which means that signals representing the same information can be received at lower levels, resulting in less interference. The transistor has a high-frequency response of up to 200MHz, making it suitable for high- speed data transmission. In addition to this, the transistor is capable of operating in temperatures as low as -55°C and high as 150°C; therefore it is suitable for a wide range of industrial and automotive applications.
The MPSA44RLRA utilizes a Darlington pair configuration. This is a pair of transistors connected in a particular way that increases their current amplification. The two core transistors are connected to each other such that the output from one transistor forms the input of the other. This increases the current gain of the transistor, making it more suitable for applications such as amplifiers, oscillators and transceivers. The device works on the principle of bipolar junction transistor (BJT) and has three terminals; base, collector, and emitter. The base-collector junction is known as the base region and the collector-emitter junction is known as the emitter region. When a current is applied to the base terminal, the electrons of the emitter region are attracted to the collector region, thus allowing current flow. The gain of the device is determined by the amount of current flowing between the base and the collector region.
The MPSA44RLRA offers many advantages such as low noise figure, high-power gain and high-frequency response. It is also easier to install and use compared to other transistors. This makes it suitable for various applications including amplifiers, transceivers, and oscillators. Furthermore, the device is able to operate in extreme temperatures, making it suitable for automotive and industrial applications.
Overall, the MPSA44RLRA is an ideal choice for many low noise RF applications due to its high-power gain, low noise figure, and high-frequency response. It is easy to install and use and can operate in extreme temperatures. This makes it suitable for a wide range of industrial and automotive applications.
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