MR25H10CDC

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The MR25H10CDC is a static RAM (SRAM) memory device that is designed to operate over an extended temperature range in a variety of applications. The device is capable of producing high-speed, low-power SRAMs with fast access times and low operating voltages. The device is available in several different packages including DIP, QFP, and TSOP packages. It has a capacity of up to 512 Kbits, with a power supply voltage range of 1.8V to 5.0 V. It has a speed of up to 25ns and is available in 256 x 16, 512 x 16, 1024 x 8, and 2048 x 8. It also has a built-in auto-precharge circuit and supports active current mode, static current mode, and auto-refresh modes.

This device is mainly used in applications where fast memory access is needed. These applications include computer system memory, digital signal processors (DSPs), graphics controllers, and embedded applications such as industrial process controllers, instrumentation, and security systems. In these applications, the device is used to store and manage data, instructions and information. It can also be used in applications such as networking, communications and other embedded systems where fast access to data is needed.

The MR25H10CDC SRAM uses a static random access memory (SRAM) cell to store the data. The SRAM cell is made up of two transistors, which are connected to ground. The value of the stored data is determined by the two transistors resistance to ground. The sustained resistors are normally held in the closed position, which allows current to flow when the address line is asserted. If the address line is NOT asserted, the sustained resistors will open, which prevents current from flowing.

In order for the MR25H10CDC to read or write data, it uses an address and data bus. The address bus consists of 16 address lines, which are used to select which memory cell that the device will access. The data bus is used to output the data from the selected memory cell or to input data into the selected memory cell. The device also has several control lines, which are used to control the operation of the SRAM.

The MR25H10CDC has several different operating modes and features. These include active current mode, static current mode, and auto-refresh modes. In active current mode, the device acts like a regular SRAM and is used to store and retrieve data. In static current mode, the SRAM is in a standby mode and only consumes power when a read or write is attempted on the device. In auto-refresh mode, the device refreshes itself periodically. This mode is used to conserve power and increase reliability.

In conclusion, the MR25H10CDC is a static RAM (SRAM) memory device, which is designed to operate over an extended temperature range and suitable for a variety of applications. It is available in several packages and has a capacity of up to 512 Kbits. It has a speed of up to 25ns, with a power supply voltage range of 1.8V to 5.0 V. It has several features and operating modes, including active current mode, static current mode, and auto-refresh modes. The MR25H10CDC is suitable for use in a wide range of applications, such as computer system memory, digital signal processors (DSPs), graphics controllers, and embedded applications.

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